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Structure and reflection spectra of In3–x S4(111)/mono-Si and In3–x S4(111)/SiO2/mono-Si films

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Abstract

Single-phase, textured In3–x S4(111)/Si(100), In3–x S4(111)/Si(111), and In3–x S4(111)/SiO2/Si(100) films have been grown by spray pyrolysis. The texture of the films has been shown to be independent of the orientation of the silicon substrate and the deposition temperature (450–500°C). From the reflection spectra of the In3–x S4 deposits, their band gap has been determined to be 1.55 eV for an indirect allowed transition. The energy of direct v–c transitions has been estimated at 1.61 eV. It has been pointed out that the observation of interference in specular reflection spectra allows one to determine the instant when a continuous film has been formed and assess the kinetics of its growth.

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Authors and Affiliations

  1. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394006, Russia

    A. V. Naumov & V. N. Semenov

  2. Institute of Volcanology and Seismology, Far East Branch, Russian Academy of Sciences, bul’v. Piipa 9, Petropavlovsk-Kamchatskii, 983006, Russia

    A. V. Sergeeva

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  1. A. V. Naumov
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  2. A. V. Sergeeva
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  3. V. N. Semenov
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Correspondence to A. V. Naumov.

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Original Russian Text © A.V. Naumov, A.V. Sergeeva, V.N. Semenov, 2015, published in Neorganicheskie Materialy, 2015, Vol. 51, No. 12, pp. 1299–1306.

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Naumov, A.V., Sergeeva, A.V. & Semenov, V.N. Structure and reflection spectra of In3–x S4(111)/mono-Si and In3–x S4(111)/SiO2/mono-Si films. Inorg Mater 51, 1205–1212 (2015). https://doi.org/10.1134/S0020168515110060

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  • DOI: https://doi.org/10.1134/S0020168515110060

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