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Ultrapure arsenic and its compounds for optical and semiconductor materials

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Abstract

The article contains a survey of methods of deep purification of elemental arsenic and its compounds used in technology of optical, optoelectronic, and semiconductor materials. Severe requirements on permissible impurity content (ppb level) and features of structure and properties of these substances make the process of their production in the state of high purity unescapably multistage. The physics and chemistry and factors determining efficiency of the developed processing routes and the attained purity level for the arsenic, its oxide, chloride, hydride, and sulfides are described in this paper.

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Authors and Affiliations

  1. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, 119991, Russia

    V. A. Fedorov

  2. Devyatykh Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences, Nizhny Novgorod, 603950, Russia

    M. F. Churbanov

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  1. V. A. Fedorov
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  2. M. F. Churbanov
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Correspondence to V. A. Fedorov.

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Fedorov, V.A., Churbanov, M.F. Ultrapure arsenic and its compounds for optical and semiconductor materials. Inorg Mater 52, 1339–1357 (2016). https://doi.org/10.1134/S0020168516130021

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  • DOI: https://doi.org/10.1134/S0020168516130021

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