Abstract
Data are presented on the 300-K photoluminescence in GaS crystals doped with Er3+ or codoped with Er3+ and Yb3+. IR excitation (λex = 976 nm) gives rise to anti-Stokes luminescence in GaS:Er3+ (0.1 at %) and GaS:Er3+,Yb3+ (0.1 + 0.1 at %) and leads to an increased intensity of the emission due to the 4 I 11/2 → 4 I 15/2 transitions. The anti-Stokes luminescence is shown to result from consecutive absorption of two photons by one Er3+ ion, and the increased intensity of Er3+ luminescence in GaS: Er3+,Yb3+ is due to energy transfer from Yb3+ to Er3+.
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References
Abdullaev, G.B., Abushov, S.A., Briskina, Ch.M., et al., Photo-and Electroluminescence of Neodymium in GaSe Crystals, Kvantovaya Elektron. (Moscow), 1984, vol. 11, no. 3, pp. 605–607.
Tagiev, B.G., Niftiev, G.M., and Abushov, S.A., Intrashell Yb3+ Transition in Gallium Sulphide Crystals, Phys. Status Solidi, 1983, vol. 118, pp. K13–K16.
Tagiev, B.G., Abushov, S.A., and Niftiev, G.M., Electroluminecence of GaS:Yb3+ Crystals, Fiz. Tekh. Poluprovodn. (Leningrad), 1984, vol. 18, pp. 1904–1906.
Tagiev, B.G., Abushov, S.A., Niftiev, G.M., et al., Photo-and Electroluminescence of Neodymium in GaS, Phys. Status Solidi A, 1985, vol. 89, pp. K191–K196.
Niftiev, G.M., Tagiev, B.G., and Abushov, S.A., Photoconductivity and Thermally Stimulated Conductivity in GaSe: Yb Single Crystals, Dokl. Akad. Nauk Az. SSR, 1983, vol. 39, no. 2, pp. 25–28.
Tagiev, B.G., Zolin, V.F., Niftiev, G.M., et al., Pr3+ Luminescence in GaS Single Crystals, Opt. Spektrosk., 1987, vol. 63, no. 3, pp. 557–559.
Belenki, G.L., Nani, R.Ch., Salaev, E.Yu., and Suleimanov, R.A., Edge Luminescence and Light Absorption in GaSxSe1−x Solid Solution at Low Temperatures, Phys. Status Solidi A, 1975, vol. 31, no. 2, pp. 707–711.
Belenki, G.L., Godzhaev, M.O., and Salaev, E.Yu., Indirect Excitons in Gallium Sulfide, Pis’ma Zh. Eksp. Teor. Fiz., 1977, vol. 26, no. 5, pp. 385–388.
Mushinskii, V.P. and Karaman, M.I., Fotoelektricheskie i lyuminestsentnye svoistva khal’kogenidov galliya i indiya (Photoelectric and Luminescent Properties of Gallium and Indium Chalcogenides), Chisinau, 1975.
Cingolani, A., Minafra, A., Tanyalo, P., and Paorici, C., Edge Emission in GaSe, GaS, Phys. Status Solidi A, 1971, vol. 4, no. 1, pp. K83–K85.
Merciewr, A., Mooser, E., and Voitchovsky, J.P., Near Edge Absorption and Luminescence of GaSe, GaS, and Mixed Crystals, J. Lumin., 1973, no. 7, pp. 241–266.
Tagiev, B.G., Niftiev, G.M., Aidaev, F.Sh., et al., Er3+ Photo-and Electroluminescence in GaS Single Crystals, Opt. Spektrosk., 1987, vol. 62, no. 2, pp. 461–463.
Tagiev, B.G., Georgobiani, A.N., Tagiev, O.B., et al., Energy Transfers between Eu2+ and Er3+ in EuGa2S4:Er3+, J. Phys.: Condens. Matter, 2004, vol. 16, no. 10, pp. 8075–8084.
Auzel, F., Comptuer quantuqie par transfert d’energie de entre deux ions de terres rares dans un tungstate mixteet sans un verre, C. R. Acad. Sci. B, 1966, vol. 262, pp. 1016–1019.
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Original Russian Text © A.N. Georgobiani, B.G. Tagiev, O.B. Tagiev, S.A. Abushov, G.Yu. Eiyubov, 2008, published in Neorganicheskie Materialy, 2008, Vol. 44, No. 1, pp. 5–9.
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Georgobiani, A.N., Tagiev, B.G., Tagiev, O.B. et al. Luminescence of GaS:Er3+ and GaS:Er3+,Yb3+ layered crystals. Inorg Mater 44, 1–5 (2008). https://doi.org/10.1134/S0020168508010019
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DOI: https://doi.org/10.1134/S0020168508010019