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Energy transfer from Tb3+ to Eu2+ in Ga2S3:(Eu2+, Tb3+) crystals

  • Spectroscopy, Interaction with Radiation
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Abstract

The photoluminescence of Ga2S3 crystals activated with Eu2+ and Tb3+ ions separately and with ions of both types is studied in the temperature range 77–300 K. It is established that, in the range 77–300 K, the observed broadband photoluminescence in (Ga2S3)0.95:(Eu2O3)0.05 crystals with a peak at 545 nm is defined by 4f 65d-4f 7(8 S 7/2) intracenter transitions in Eu2+ ions and the photoluminescence with peaks at 492, 544, 584, 625, and 680 nm in (Ga2S3)0.99(Tb2O3)0.01 crystals is due to the 5d → 2 F j (j = 6−2) intracenter transitions in Tb3+ ions. It is shown that the photoluminescence bands of Tb3+ ions in the (Ga2S3)0.94(Eu2O3)0.05(Tb2O3)0.01 crystals disappears because of excitation energy transfer from Tb3+ ions to Eu2+ ions; i.e., the Tb3+ ion is a sensitizer of the photoluminescence of the Eu2+ ion.

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Authors and Affiliations

  1. Institute of Physics, National Academy of Sciences of Azerbaijan, Baku, Az-1143, Azerbaijan

    O. B. Tagiev & Kh. B. Ganbarova

  2. Moscow State University, Baku Branch, Baku, Az-1143, Azerbaijan

    O. B. Tagiev

Authors
  1. O. B. Tagiev
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  2. Kh. B. Ganbarova
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Correspondence to O. B. Tagiev.

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Original Russian Text © O.B. Tagiev, Kh.B. Ganbarova, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 4, pp. 459–462.

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Tagiev, O.B., Ganbarova, K.B. Energy transfer from Tb3+ to Eu2+ in Ga2S3:(Eu2+, Tb3+) crystals. Semiconductors 49, 448–451 (2015). https://doi.org/10.1134/S1063782615040247

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