Skip to main content
SpringerLink
Log in

LPE growth of InP/InGaAsP/InP heterostructures and separate preparation of high-temperature solutions

  • Published:
Inorganic Materials Aims and scope

Abstract

We describe a process for separate preparation of high-temperature solutions, which includes a prolonged preannealing (synthesis) at elevated temperatures. This process enables liquid phase epitaxy (LPE) of InGaAsP with highly reproducible physical properties (layer thickness, photoluminescence wavelength, and lattice parameter) and electrical characteristics (current-power curve, dark current, output power, emission wavelength, and threshold and working currents). Using this process, InP/InGaAsP/InP heterostructures can be grown by LPE in a wide temperature range (480–680°C) with highly reproducible parameters, for both photodetectors and light-emitting devices. An original LPE process is proposed which takes advantage of the separate preparation and pouring of high-temperature solutions with the use of graphite equipment.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Miya, T., Tesunuma, Y., Hosaka, T., and Miyatshita, T., Ultimate Low-Loss Single-Mode Fibre at 1.55 μm, Electron. Lett., 1979, vol. 15, pp. 106–108.

    Article  CAS  Google Scholar 

  2. Nagai, H. and Noguchi, Y., Crack Formation in InP-Ga, InAs-InP Double-Heterostructure Fabrication, Appl. Phys. Lett., 1976, vol. 29, pp. 740–741.

    Article  CAS  Google Scholar 

  3. Alferov, Zh.I., Gorelenok, A.T., Kolyshkin, V.I., and Kop’ev, N.S., 1.3–1.5 μm GaInAsP Double Heterostructure Injection Lasers, Pis’ma Zh. Tekh. Fiz., 1978, vol. 4, no. 22, pp. 1329–1333.

    CAS  Google Scholar 

  4. Kano, H., Oe, K., Ando, S., and Sugiyama, H., Buried Stripe GaInAsP/InP DH Laser Prepared by Using Meltback Method, Jpn. J. Appl. Phys., 1978, vol. 17, no. 10, pp. 1887–1888.

    Article  CAS  Google Scholar 

  5. Alferov, Zh.I., Vasil’ev, M.G., Golikova, A.T., and Gorelenok, A.T., Buried Stripe CW InGaAsP/InP Double Heterostructure Lasers Fabricated by Liquid-Phase and Vapor-Phase Epitaxy, Pis’ma Zh. Tekh. Fiz., 1982, vol. 8, no. 11, pp. 680–684.

    CAS  Google Scholar 

  6. Vasil’ev, M.G., Dolginov, L.M., Drakin, A.E., et al., InGaAsP/InP Injection Lasers with Three-Layer Fiber Waveguides, Kvantovaya Elektron. (Moscow), 1984, no. 3, pp. 631–632.

  7. Feng, M., Windhorn, T., Tashima, M., and Stillman, G., Liquid-Phase Epitaxial Growth of Lattice-Matched InGaAsP on (100) InP for 1.15–1.31 μm Spectral Region, Appl. Phys., 1978, vol. 32, no. 11, pp. 758–761.

    CAS  Google Scholar 

  8. Lee, T.P., Burus, C.A., and Dentai, A.G., InGaAs/InP p-i-n Photodiodes for Light Wave Communications at 0.95–1.65 μm Wavelength, IEEE J. Quantum Electron., 1981, vol. 17, pp. 232–238.

    Article  Google Scholar 

  9. Goldobin, I.S., Ivanov, A.V., Konyaev, V.P., et al., Indium Phosphide-Gallium Arsenide Double-Heterostructure Mesa Photodiodes, Elektron. Tekh., Ser. II: Lazernaya Tekh. Optoelektron., 1985, no. 5, pp. 79–95.

  10. Nakajma, K., Kusunoku, T., Akita, K., and Katani, T., Phase Diagram of the In-Ga-As-P Quaternary System and LPE Growth Condition for Lattice Matching on InP Substrates, J. Electrochem. Soc., 1978, vol. 125, no. 1, pp. 123–127.

    Article  Google Scholar 

  11. Antypas, G.A. and Moon, R.L., Growth and Characterization of InP-InGaAsP Lattice-Matched Heterojunctions, J. Electrochem. Soc., 1973, vol. 120, no. 11, pp. 1574–1577.

    Article  CAS  Google Scholar 

  12. Antypas, G.A. and Edgecumbe, J., Distribution Coefficients of Ga, As, and P during Growth of InGaAsP Layers by Liquid Phase Epitaxy, J. Cryst. Growth, 1976, vol. 34, no. 1, pp. 132–138.

    Article  CAS  Google Scholar 

  13. Sankaran, R., Antypas, G.A., Moon, R.L., et al., Growth and Characterisation of InGaAsP-InP Lattice-Matched Heterojunctions, J. Vac. Sci. Technol., 1976, vol. 13, no. 4, pp. 932–937.

    Article  CAS  Google Scholar 

  14. Volkov, V.V., Van Landuyt, J., Markushkin, K.M., et al., Characterization of the LPE Grown InGaAsP/InP Heterostructures: IR-LED at 1.66 μm Used for the Remote Monitoring of Methane Gas, J. Cryst. Growth, 1997, vol. 173, pp. 285–296.

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, Russia

    M. G. Vasil’ev, A. M. Vasil’ev, D. M. Vilk & A. A. Shelyakin

Authors
  1. M. G. Vasil’ev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. M. Vasil’ev
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. D. M. Vilk
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. A. Shelyakin
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Original Russian Text © M.G. Vasil’ev, A.M. Vasil’ev, D.M. Vilk, A.A. Shelyakin, 2007, published in Neorganicheskie Materialy, 2007, Vol. 43, No. 7, pp. 775–780.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Vasil’ev, M.G., Vasil’ev, A.M., Vilk, D.M. et al. LPE growth of InP/InGaAsP/InP heterostructures and separate preparation of high-temperature solutions. Inorg Mater 43, 683–688 (2007). https://doi.org/10.1134/S0020168507070011

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S0020168507070011

Keywords

Search

Navigation