Skip to main content
Log in

Effect of thermal evaporation rate on the basic physical properties of glassy (As2S3) x (As2Se3)1−x films

  • Published:
Inorganic Materials Aims and scope

Abstract

We have studied the effect of thermal evaporation rate on the basic physical properties of glassy (As2S3) x (As2Se3)1−x thin films on glass substrates and have determined the optimal range of deposition rates corresponding to the highest photosensitivity and long-term stability of the films. The results are interpreted in terms of the interaction between the deposit and the residual gas in the vacuum chamber.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. Lyubin, V.M., Glassy Semiconductors in Optical Image Storage Devices, in Struktura i svoistva nekristallicheskikh poluprovodnikov (Structure and Properties of Noncrystalline Semiconductors), Leningrad: Nauka, 1976, pp. 415–425.

    Google Scholar 

  2. Zakharov, V.P. and Gerasimenko, V.S., Strukturnye osobennosti poluprovodnikov v amorfnom sostoyanii (Structural Aspects of Amorphous Semiconductors), Kiev: Naukova Dumka, 1976.

    Google Scholar 

  3. Mott, N. and Davis, E., Electronic Processes in Noncrystalline Materials, Oxford: Oxford Univ. Press, 1979, vol. 2.

    Google Scholar 

  4. Palatnik, L.S., Cheremskoi, P.G., and Fuks, M.Ya., Pory v plenkakh (Pores in Films), Moscow: Energoizdat, 1982, p. 60.

    Google Scholar 

  5. Ishimov, V.M., Senokosov, E.A., Dement’ev, I.V., and Goglidze, T.I., Processing Conditions for Optimizing the Optoelectronic Parameters of Glassy (As2S3) x (As2Se3)1−x Semiconductor Films on Mylar, Pis’ma Zh. Tekh. Fiz., 2002, vol. 28, no. 16, pp. 79–84.

    Google Scholar 

  6. Dement’ev, I.V., Ishimov, V.M., and Senokosov, E.A., TMR Patent 214, Byull. Ekon. Pravovoi Inform., 2002, no. 2.

  7. Rose, A., Concepts in Photoconductivity and Allied Problems, New York: Wiley, 1963.

    Google Scholar 

  8. Spear, W.E., Drift Mobility Techniques for the Study of Electrical Properties in Insulating Solids, J. Non-Cryst. Solids, 1969, vol. 1, pp. 197–214.

    Article  CAS  Google Scholar 

  9. Arkhipov, V.I. and Rudenko, A.I., On the Study of Amorphous Material Band Structure by Current Injection, Phys. Lett. A, 1977, vol. 61, pp. 55–57.

    Article  Google Scholar 

  10. Urbach, F., The Long-Wavelength Edge of Photographic Sensitivity and the Electronic Absorption of Solids, Phys. Rev., 1953, vol. 92, no. 5, p. 1324.

    Article  CAS  Google Scholar 

  11. Amorphous Semiconductors, Brodsky, M., Ed., Heidelberg: Springer, 1979.

    Google Scholar 

  12. Choo, F.C. and Tong, B.Y., Imperfections and Hydrogen Incorporation in Crystalline and Amorphous Structures, Proc. 7th Int. Conf. Amorphous and Liquid Semiconductors, Edinburgh, 1977, pp. 120–124.

Download references

Author information

Authors and Affiliations

Authors

Additional information

Original Russian Text © T.I. Goglidze, I.V. Dement’ev, V.M. Ishimov, E.A. Senokosov, 2007, published in Neorganicheskie Materialy, 2007, Vol. 43, No. 1, pp. 97–101.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Goglidze, T.I., Dement’ev, I.V., Ishimov, V.M. et al. Effect of thermal evaporation rate on the basic physical properties of glassy (As2S3) x (As2Se3)1−x films. Inorg Mater 43, 90–93 (2007). https://doi.org/10.1134/S0020168507010189

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S0020168507010189

Navigation