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Studies on the RF sputtered amorphous SiGe thin films

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Abstract

In this study, rf sputtered hydrogenated amorphous silicon-germanium thin films deposited at room temperature have been investigated by spectroscopic ellipsometry and Rutherford backscattering. Technological parameters were determined for good layer quality of amorphous material. The layer thicknesses were first evaluated from the Rutherford backscattering and spectroscopic ellipsometry measurements, then measured directly by step-profiler, and compared to each other. The inherence of technological parameters and composition of the layers is discussed.

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References

  1. Mui, K., Basa, D.K., Smith, F.W., and Corderman, R., Phys. Rev. B: Condens. Matter, 1987, vol. 35, no. 17, pp. 8089–9102.

    CAS  Google Scholar 

  2. Basa, D.K., Solid State Commun., 2001, vol. 118, no. 10, pp. 535–539.

    Article  CAS  Google Scholar 

  3. Basa, D.K., Thin Solid Films, 2002, vol. 406, no. 1/2, pp. 75–78.

    CAS  Google Scholar 

  4. Mousseau, N. and Thorpe, M.F., Phys. Rev. B: Condens. Matter, 1993, vol. 48, no. 8, pp. 5172–5178.

    CAS  Google Scholar 

  5. Qi, W., Antoniadis, H., Schiff, E.A., and Guha, S., Phys. Rev. B: Condens. Matter, 1993, vol. 47, no. 15, pp. 9435–9448.

    Google Scholar 

  6. Wickboldt, P., Pang, D., Paul, W., et al., J. Appl. Phys., 1997, vol. 81, no. 9, pp. 625–6267.

    Article  Google Scholar 

  7. Maruyama, E., Okamoto, S., Terakawa, A., et al., Sol. Energy Mater. Sol. Cells, 2002, vol. 74, nos. 1–4, pp. 339–349.

    CAS  Google Scholar 

  8. Jun, K.H., Rath, J.K., and Schropp, R.E.I., Sol. Energy Mater. Sol. Cells, 2002, vol. 74, nos. 1–4, pp. 357–363.

    CAS  Google Scholar 

  9. Craeff, C.F.D. and Chambouleyron, I., J. Appl. Phys., 1994, vol, 76, no. 4, pp. 2473–2478.

    Google Scholar 

  10. Matsuda, A. and Tanaka, K., J. Non-Cryst. Solids, 1987, vol. 97/98, no. 2, pp. 1367–1374.

    Google Scholar 

  11. Maruyama, T.H., J. Electrochem. Soc., 2000, vol. 147, pp. 363–370.

    CAS  Google Scholar 

  12. Ishihara, F., Uji, H., Kamimura, T., et al., Jpn. J. Appl. Phys., Part I, 1995, vol. 34, no. 5, pp. 2229–2234.

    CAS  Google Scholar 

  13. Kolodziej, A., J. Non-Cryst. Solids, 1995, vol. 185, no. 1/2, pp. 168–175.

    CAS  Google Scholar 

  14. Ichimura, T., Hama, T., Ihara, T., et al., Proc. 18th IEEE Photovoltaic Specialists Conf., 1985, pp. 1495–1499.

  15. Volk, J., Fried, M., Polgár, O., and Bársony, I., Phys. Status Solidi A, 2003, vol. 197, no. 1, pp. 208–211.

    CAS  Google Scholar 

  16. Szekeres, A., Paneva, A., and Alexandrova, S., Thin Solid Films, 1999, vol. 343/344, pp. 385–388.

    Article  Google Scholar 

  17. Fried, M. and van Silfhout, A., Phys. Rev. B: Condens. Matter, 1994, vol. 49, no. 8, pp. 5699–5702.

    CAS  Google Scholar 

  18. Franta, D., Ohlidal, I., Frumar, M., and Jedelský, J., Appl. Surf. Sci., 2001, vol. 175/176, pp. 555–561.

    Article  Google Scholar 

  19. Strehlke, S., Sarti, D., Polgar, O., et al., Electrochem. Soc. Proc. Ser., 1997, vol. 97-20, pp. 278–284.

    CAS  Google Scholar 

  20. Krotkus, A., Grigoras, K., Pacebutas, V., et al., Sol. Energy Mater. Sol. Cells, 1997, vol. 45, no. 3, pp. 26–273.

    Google Scholar 

  21. Modreanu, M., Gartner, M., Cobianu, C., et al., Thin Solid Films, 2004, vol. 450, no. 1, pp. 105–110.

    CAS  Google Scholar 

  22. Petrik, P. and Schneider, C., Vacuum, 2001, vol. 61, nos. 2–4, pp. 427–434.

    CAS  Google Scholar 

  23. Kótai, E., Proc. 14th Int. Conf. on Appl. Accelerators in Res. Ind. (Denton, 1996), New York: Am. Phys. Soc., 1997, pp. 631–634.

    Google Scholar 

  24. Woollam J.A. Co., Inc., 645 M Street, Suite 102 Lincoln, NE 68508 USA.

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Authors and Affiliations

  1. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O.Box 49, H-1525, Budapest, Hungary

    M. Serényi, T. Lohner, Z. Zolnai, P. Petrik, Á. Nemcsics & N. Q. Khánh

  2. Budapest College of Engineering, Institute of Microelectronics and Technology, Tavaszmezöu, 17, H-1084, Budapest, Hungary

    Á. Nemcsics & P. Turmezei

Authors
  1. M. Serényi
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  2. T. Lohner
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  3. Z. Zolnai
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  4. P. Petrik
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  5. Á. Nemcsics
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  6. N. Q. Khánh
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  7. P. Turmezei
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Serényi, M., Lohner, T., Zolnai, Z. et al. Studies on the RF sputtered amorphous SiGe thin films. Inorg Mater 42, 3–6 (2006). https://doi.org/10.1134/S002016850601002X

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  • DOI: https://doi.org/10.1134/S002016850601002X

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