Abstract
The heating of electrons in an AlxGa1−x As/GaAs (x>0.42) heterostructure in a lateral (directed along the heterointerfaces) electric field is studied. Population inversion on the size-quantization subbands of the Γ valley of GaAs and a giant population inversion between the X-valley states of AlxGa1−x As and Γ-valley states of GaAs are predicted. The possibility of using these inversions for achieving stimulated IR emission is discussed.
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References
J. Faist, F. Capasso, D. L. Sivko et al., Science 264, 553 (1994).
O. Gauthier-Lafaye, P. Boucaud, F. H. Julien et al., Appl. Phys. Lett. 71, 3619 (1997).
S. Adachi, J. Appl. Phys. 58, R1 (1985).
N. Z. Vagidov, Z. S. Gribnikov, and V. M. Ivashchenko, Fiz. Tekh. Poluprovodn. 24, 1087 (1990) [Sov. Phys. Semicond. 24, 684 (1990)].
Z. S. Gribnikov, K. Hess, and G. A. Kosinovsky, J. Appl. Phys. 77, 1337 (1995).
Y. Garbonneau, J. Beerens, L. A. Cury et al., Appl. Phys. Lett. 62, 1955 (1993).
J. J. Finley, R. J. Teissier, J. W. Cockburn et al., Phys. Status Solidi B 204, 215 (1997).
M. Shur, GaAs Devices and Circuits, Plenum Press, New York, 1987 [Russian translation, Mir, Moscow, 1991].
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Pis’ma Zh. Éksp. Teor. Fiz. 68, No. 1, 73–77 (10 July 1998)
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Aleshkin, V.Y., Andronov, A.A. Giant population inversion of hot electrons in GaAs/AlAs type heterostructures with quantum wells. Jetp Lett. 68, 78–83 (1998). https://doi.org/10.1134/1.567824
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DOI: https://doi.org/10.1134/1.567824