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Carrier transport in multilayer InAs/GaAs quantum dot heterostructures grown by ion beam crystallization

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Abstract

We have studied carrier transport in n-GaAs/n +-Al0.35Ga0.65As/i-GaAs/InAs-QD/i-GaAs/n +-GaAs/GaAs(SI) multilayer heterostructures grown by ion beam crystallization. The results demonstrate that, at a temperature of 300 K, the dominant mechanisms of carrier transport from the quantum dots are thermionic emission (at bias voltages under 0.5 V) and electric field-assisted tunneling (at bias voltages above 0.5 V). At a temperature of 90 K and forward bias voltages under 0.25 V, the background drift current prevails. In the range 0.25–1 V, we observe drift current saturation and an increase in the contribution of the tunneling current. At bias voltages above 1 V, the electric field-assisted tunneling current prevails. A narrow photoluminescence peak observed at 1.18 eV (T = 90 K) points to interband recombination through the ground state in the InAs quantum dots. Weak features at 1.23 and 1.29 eV correspond to weak recombination through excited states of the quantum dots.

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Authors and Affiliations

  1. Southern Scientific Center, Russian Academy of Sciences, ul. Chekhova 41, Rostov-on-Don, 344006, Russia

    A. S. Pashchenko, S. N. Chebotarev & L. S. Lunin

  2. OOO SKTB Inversiya, ul. Zorge 7, Rostov-on-Don, 344104, Russia

    A. S. Pashchenko & S. N. Chebotarev

Authors
  1. A. S. Pashchenko
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  2. S. N. Chebotarev
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  3. L. S. Lunin
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Correspondence to A. S. Pashchenko.

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Original Russian Text © A.S. Pashchenko, S.N. Chebotarev, L.S. Lunin, 2015, published in Neorganicheskie Materialy, 2015, Vol. 51, No. 3, pp. 243–247.

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Pashchenko, A.S., Chebotarev, S.N. & Lunin, L.S. Carrier transport in multilayer InAs/GaAs quantum dot heterostructures grown by ion beam crystallization. Inorg Mater 51, 197–200 (2015). https://doi.org/10.1134/S0020168515020144

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  • DOI: https://doi.org/10.1134/S0020168515020144

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