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Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition

  • XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014
  • Published:
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Abstract

The possibility of using the laser deposition method to grow crystalline light-emitting structures with GaAsSb/GaAs quantum wells (QWs) is experimentally demonstrated for the first time. The growth temperature of the GaAs1 − x Sb x layers is varied within the range 450–550°C; according to X-ray diffraction analyses, the content of antimony reaches x Sb ≈ 0.37 at a growth temperature of 450°C. Low-temperature (4 K) photoluminescence spectroscopy demonstrates the presence of a peak associated with the GaAsSb/GaAs QW at around 1.3 μm at the minimum laser-light pumping level. The optimal growth temperature T g = 500°C and arsine flow rate P A = 2.2 × 10−8 mol/s at which the best emission properties of QWs with x Sb ∼ 0.17–0.25 are observed at temperatures of 77 and 300 K are determined. It is shown that GaAsSb/GaAs QWs with similar parameters (width and composition) grown by laser deposition at 500°C and metal-organic vapor-phase epitaxy at 580°C have comparable optical quality.

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Authors and Affiliations

  1. Physico-Technical Research Institute, Lobachevsky State University of Nizhni Novgorod, Nizhni Novgorod, 603950, Russia

    B. N. Zvonkov, O. V. Vikhrova, M. V. Dorokhin & I. L. Kalentyeva

  2. Lobachevsky State University of Nizhni Novgorod, Nizhni Novgorod, 603950, Russia

    M. V. Dorokhin, I. L. Kalentyeva, S. V. Morozov & D. I. Kryzhkov

  3. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    S. V. Morozov, D. I. Kryzhkov & P. A. Yunin

Authors
  1. B. N. Zvonkov
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  2. O. V. Vikhrova
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  3. M. V. Dorokhin
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  4. I. L. Kalentyeva
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  5. S. V. Morozov
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  6. D. I. Kryzhkov
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  7. P. A. Yunin
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Corresponding author

Correspondence to O. V. Vikhrova.

Additional information

Original Russian Text © B.N. Zvonkov, O.V. Vikhrova, M.V. Dorokhin, I.L. Kalentyeva, S.V. Morozov, D.I. Kryzhkov, P.A. Yunin, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 1, pp. 112–116.

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Zvonkov, B.N., Vikhrova, O.V., Dorokhin, M.V. et al. Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition. Semiconductors 49, 109–112 (2015). https://doi.org/10.1134/S1063782615010285

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  • DOI: https://doi.org/10.1134/S1063782615010285

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