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Effect of nonuniform permittivity of a solid-state matrix on the spectral width of erbium ion luminescence

  • Proceedings of the Conference “Nanophotonics 2004” (Nizhni Novgorod, Russia, May 2–6, 2004)
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Abstract

The Stark splitting of the energy levels of Er3+ ions implanted in a structure made up of alternating layers of silicon dioxide and quasi-ordered silicon nanocrystals is calculated. The level splitting is caused by the electric field of the image charges induced at the interfaces between layers with different permittivities. The splitting was established to increase as the contrast in permittivity between the silicon dioxide and silicon nanocrystal layers increases, as well as when the erbium ions approach the layer interface. The results obtained offer an adequate explanation of the experimentally observed additional broadening of the erbium photoluminescence band (0.8 eV) with increasing characteristic size of the silicon nanocrystals.

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Authors and Affiliations

  1. Moscow State University, Vorob’evy gory, Moscow, 119992, Russia

    S. A. Teterukov, M. G. Lisachenko, O. A. Shalygina, D. M. Zhigunov, V. Yu. Timoshenko & P. K. Kashkarov

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  1. S. A. Teterukov
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  2. M. G. Lisachenko
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  3. O. A. Shalygina
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  4. D. M. Zhigunov
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  5. V. Yu. Timoshenko
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  6. P. K. Kashkarov
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__________

Translated from Fizika Tverdogo Tela, Vol. 47, No. 1, 2005, pp. 102–104.

Original Russian Text Copyright © 2005 by Teterukov, Lisachenko, Shalygina, Zhigunov, Timoshenko, Kashkarov.

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Teterukov, S.A., Lisachenko, M.G., Shalygina, O.A. et al. Effect of nonuniform permittivity of a solid-state matrix on the spectral width of erbium ion luminescence. Phys. Solid State 47, 106–109 (2005). https://doi.org/10.1134/1.1853456

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  • DOI: https://doi.org/10.1134/1.1853456

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