Skip to main content
SpringerLink
Log in

Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface

  • SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

A method for creation of Ge/Si structures with space-arranged nanoislands by heteroepitaxy on the pre-patterned Si(001) substrates with a square grid of the etched pits is developed. The influence of depth and inter-pit spacing on the nucleation and growth of Ge(Si) nanoislands is studied. It is shown, that the nanoislands are formed either inside pits or at their periphery depending on the pit depth. It is found that the size of the nanoislands grown inside the pits goes up with the increase of the inter-pit distance from 1 to 4 μm. The pronounced photoluminescence signal related with the space-arranged arrays of quantum dots with a period of 1 μm is observed in the range of energies from 0.9 to 1.0 eV.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

REFERENCES

  1. D. Grützmacher, T. Fromherz, C. Dais, J. Stangl, E. Müller, Y. Ekinci, H. H. Solak, H. Sigg, R. T. Lechner, E. Wintersberger, S. Birner, V. Holý, and G. Bauer, Nano Lett. 7, 3150 (2007).

    Article  ADS  Google Scholar 

  2. Zh. Zhong, A. Halilovic, M. Mühlberger, F. Schäfler, and G. Bauer, Appl. Phys. Lett. 87, 6258 (2003).

    Google Scholar 

  3. Zh. Zhong, O. G. Schmidt, and G. Bauer, App. Phys. Lett. 87, 133111 (2005).

    Article  ADS  Google Scholar 

  4. Zh. V. Smagina, N. P. Stepina, V. A. Zinovyev, P. L. Novikov, P. A. Kuchinskaya, and A. V. Dvurechenskii, Appl. Phys. Lett. 105, 153106 (2014).

    Article  ADS  Google Scholar 

  5. A. V. Tsukanov, Russ. Microelectron. 42, 325 (2013).

    Article  Google Scholar 

  6. M. Schatzl, F. Hackl, M. Glaser, P. Rauter, M. Brehm, L. Spindlberger, A. Simbula, M. Galli, T. Fromherz, and F. Schäffler, ACS Photon. 4, 665 (2017).

  7. S. Kiravittaya, A. Rastelli, and O. G. Schmidt, Rep. Progr. Phys. 72, 046502 (2009).

    Article  ADS  Google Scholar 

  8. M. Grydlik, M. Brehm, T. Tayagaki, G. Langer, O. G. Schmidt, and F. Schäffler, Appl. Phys. Lett. 106, 251904 (2015).

    Article  ADS  Google Scholar 

  9. A. Pascale, I. Berbezier, A. Ronda, and P. C. Kelires, Phys. Rev. B 77, 075311 (2008).

    Article  ADS  Google Scholar 

  10. Zh. V. Smagina, A. V. Dvurechenskii, V. A. Seleznev, P. A. Kuchinskaya, V. A. Armbrister, V. A. Zinovyev, N. P. Stepina, A. F. Zinovieva, A. V. Nenashev, and A. K. Gutakovskii, Semiconductors 49, 749 (2015).

    Article  ADS  Google Scholar 

  11. G. Hubbard, S. J. Abbott, Q. Chen, D. W. E. Allsopp, W. N. Wang, C. R. Bowen, R. Stevens, A. Šatka, D. Haško, F. Uherek, and J. Kovåč, Phys. E (Amsterdam, Neth.) 41, 1118 (2009).

  12. P. Chen, Y. Fan, and Zh. Zhong, Nanotechnology 20, 095303 (2009).

    Article  ADS  Google Scholar 

  13. J. A. Floro, Appl. Phys. Lett. 109, 193112 (2016).

    Article  ADS  Google Scholar 

  14. G. Vastola, M. Grydlik, M. Brehm, T. Fromherz, G. Bauer, F. Boioli, L. Miglio, and F. Montalenti, Phys. Rev. B 84, 155415 (2011).

    Article  ADS  Google Scholar 

  15. Y. J. Ma, C. Zeng, T. Zhou, S. F. Huang, Y. L. Fan, Z. Zhong, X. J. Yang, J. S. Xia, and Z. M. Jiang, J. Phys. D: Appl. Phys. 47, 485303 (2014).

    Article  Google Scholar 

  16. O. Kienzle, F. Ernst, M. Rühle, O. G. Schmidt, and K. Eberl, Appl. Phys. Lett. 74, 269 (1999).

    Article  ADS  Google Scholar 

  17. V. A. Zinovyev, A. V. Dvurechenskii, P. A. Kuchinskaya, V. A. Armbrister, S. A. Tiis, A. A. Shklyaev, and A. V. Mudryi, Semiconductors 49, 149 (2015).

    Article  ADS  Google Scholar 

  18. Zh. Zhong, W. Schwinger, F. Schäffler, G. Bauer, G. Vastola, F. Montalenti, and L. Miglio, Phys. Rev. Lett. 98, 176102 (2007).

    Article  ADS  Google Scholar 

  19. V. Ya. Aleshkin, N. A. Bekin, N. G. Kalugin, Z. F. Krasil’nik, A. V. Novikov, V. V. Postnikov, and Kh. Seiringer, JETP Lett. 67, 48 (1998).

    Article  ADS  Google Scholar 

Download references

ACKNOWLEDGMENTS

We are grateful to V.A. Armbrister for conducting the MBE growth of the Ge/Si structures. The part of the study concerned with the development of methods for the growth of structures was supported by the Russian Science Foundation, project no. 14-12-00931-P. The development of the technology of EBL patterning of the surface was supported by the Russian Foundation for Basic Research, project no. 16-38-00851-mol-a. Luminescence measurements were supported by the Presidium of the Russian Academy of Sciences, Program of basic research “Nanostructures: Physics, Chemistry, Biology, and Fundamentals of Technologies”.

Author information

Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    Zh. V. Smagina, V. A. Zinovyev, G. K. Krivyakin, E. E. Rodyakina, P. A. Kuchinskaya, B. I. Fomin & A. V. Dvurechenskii

  2. Novosibirsk State University, 630090, Novosibirsk, Russia

    G. K. Krivyakin, E. E. Rodyakina & A. V. Dvurechenskii

  3. Institute for Physics of Microstructures, Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia

    A. N. Yablonskiy, M. V. Stepikhova & A. V. Novikov

Authors
  1. Zh. V. Smagina
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. A. Zinovyev
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. G. K. Krivyakin
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. E. E. Rodyakina
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. P. A. Kuchinskaya
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. B. I. Fomin
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. A. N. Yablonskiy
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. M. V. Stepikhova
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. A. V. Novikov
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. A. V. Dvurechenskii
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Zh. V. Smagina.

Additional information

Translated by E.A. Smorgonskaya

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Smagina, Z.V., Zinovyev, V.A., Krivyakin, G.K. et al. Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface. Semiconductors 52, 1150–1155 (2018). https://doi.org/10.1134/S1063782618090191

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782618090191

Keywords

Search

Navigation