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Infrared absorption by pairs of group III and V impurities in silicon

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Abstract

Infrared absorption bands, shifted to regions of lower energies relative to narrow lines of transitions of impurities to excited states, are investigated in silicon doped with group III and V impurities in concentrations above 1016 cm−3. It is found that the band structure is peculiar to each of the investigated impurities but independent of their concentrations, and the absorption coefficients in the bands increase approximately quadratically with concentration. This leads one to infer that the bands are caused by the excitation of charge carriers bound on impurity pairs localized within several Bohr radii.

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References

  1. A. K. Ramdas and S. Rodrigues, Rep. Prog. Phys. 44, 1278 (1981).

    Article  Google Scholar 

  2. H. Chandrasekhar, A. K. Ramdas, and S. Rodrigues, Phys. Rev. B 12, 5780 (1975).

    Article  ADS  Google Scholar 

  3. Ya. E. Pokrovskii, O. I. Smirnova, and N. A. Khvalkovskii, Solid State Commun. 93, 458 (1995).

    Article  Google Scholar 

  4. Ya. E. Pokrovskii, O. I. Smirnova, and N. A. Khval’kovskii, Zh. Éksp. Teor. Fiz. 117, 457 (2000) [JETP 90, 404 (2000)].

    Google Scholar 

  5. W. Scott, Appl. Phys. Lett. 32, 540 (1978).

    ADS  Google Scholar 

  6. R. Baron, M. H. Young, J. K. Neeland, et al., Appl. Phys. Lett. 30, 594 (1977).

    Article  ADS  Google Scholar 

  7. Ya. E. Pokrovskii, O. I. Smirnova, and N. A. Khval’kovskii, in Proceedings of the V Russia Conference on Physics of Semiconductors, Nizhni Novgorod, 2001, p. 189.

  8. N. Sclar, Progr. Quant. Electr. 9, 149 (1984).

    Google Scholar 

  9. Tables of Physics Quantities: Reference Book, Ed. by K. I. Kikoin (Atomizdat, Moscow, 1976).

    Google Scholar 

  10. Sh. M. Kogan and A. F. Polupanov, in Proceedings of the 3rd International Conference on Shallow Impurities in Semiconductors, Ed. by B. Monemar, Inst. Phys. Conf. Ser., No. 95, 527 (1988).

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Authors and Affiliations

  1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, 101999, Russia

    Ya. E. Pokrovskii, O. I. Smirnova & N. A. Khval’kovskii

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  1. Ya. E. Pokrovskii
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  2. O. I. Smirnova
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  3. N. A. Khval’kovskii
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Translated from Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 122, No. 1, 2002, pp. 97–100.

Original Russian Text Copyright © 2002 by Pokrovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Smirnova, Khval’kovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \).

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Pokrovskii, Y.E., Smirnova, O.I. & Khval’kovskii, N.A. Infrared absorption by pairs of group III and V impurities in silicon. J. Exp. Theor. Phys. 95, 83–86 (2002). https://doi.org/10.1134/1.1499905

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  • DOI: https://doi.org/10.1134/1.1499905

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