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Terahertz injection electroluminescence in multiperiod quantum-cascade AlGaAs/GaAs structures

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Abstract

Terahertz electroluminescence in the range ≈1.5 THz was observed in a quantum-cascade GaAs/AlGaAs structure containing 40 periods of tunnel-coupled wells. The luminescence is caused by the spatially indirect optical electron transitions between the ground states of neighboring quantum wells.

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Translated from Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 74, No. 2, 2001, pp. 105–107.

Original Russian Text Copyright © 2001 by Zinov’ev, Andrianov, Nekrasov, Petrovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Belyakov, Sreseli, Hill, Chamberlain.

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Zinov’ev, N.N., Andrianov, A.V., Nekrasov, V.Y. et al. Terahertz injection electroluminescence in multiperiod quantum-cascade AlGaAs/GaAs structures. Jetp Lett. 74, 100–102 (2001). https://doi.org/10.1134/1.1405894

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  • DOI: https://doi.org/10.1134/1.1405894

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