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Solid-state reactions in TiBx-GaAs contact structures upon rapid thermal annealing

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Abstract

Solid-state phase reactions in the initial and vacuum-annealed (T=500°C, 1 h) TiBx-GaAs junctions were studied. Thermal treatment of the samples leads to changes in a transition layer structure, with the formation of BxGa1−x As and TixGa1−x As ternary phases. A physical mechanism explaining these structural transformations is proposed.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine

    V. V. Milenin & R. V. Konakova

Authors
  1. V. V. Milenin
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  2. R. V. Konakova
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 27, No. 14, 2001, pp. 30–35.

Original Russian Text Copyright © 2001 by Milenin, Konakova.

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Milenin, V.V., Konakova, R.V. Solid-state reactions in TiBx-GaAs contact structures upon rapid thermal annealing. Tech. Phys. Lett. 27, 586–588 (2001). https://doi.org/10.1134/1.1388952

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  • DOI: https://doi.org/10.1134/1.1388952

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