Abstract
A study is made into the temperature dependence of residual polarization of negative muons in crystalline silicon with the concentration of impurity of the n-and p-types ranging from 8.7×1013 to 4.1× 1018 cm−3. The measurements are performed in a magnetic field of 1000 G transverse to the muon spin, in the temperature range from 4.2 to 300 K. The form of the temperature dependence of the relaxation rate v of the magnetic moment of the μAl0 acceptor in silicon is determined. For a nondegenerate semiconductor, the relaxation rate depends on temperature as v ∝ T q (q ≈ 3). A variation in the behavior of the temperature dependence and a multiple increase in the relaxation rate are observed in the range of impurity concentration in excess of 1018 cm−3. The importance of phonon scattering and spin-exchange scattering of free charge carriers by an acceptor from the standpoint of relaxation of the acceptor magnetic moment is discussed. The constant of hyperfine interaction in an acceptor center formed by an atom of aluminum in silicon is estimated for the first time: |A hf (Al)/2π| ∼ 2.5×106s−1.
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References
G. D. Watkins, Fiz. Tverd. Tela (St. Petersburg) 41, 826 (1999) [Phys. Solid State 41, 746 (1999)].
A. Baldereschi and N. O. Lipari, Phys. Rev. B 8, 2697 (1973).
A. V. Malyshev, I. A. Merkulov, and A. V. Rodina, Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 159 (1996) [Semiconductors 30, 91 (1996)].
T. L. Linnik and V. I. Sheka, Fiz. Tverd. Tela (St. Petersburg) 41, 1556 (1999) [Phys. Solid State 41, 1425 (1999)].
G. W. Ludwig and H. H. Woodbury, Electron Spin Resonance in Semiconductors (Academic, New York, 1962).
V. N. Gorelkin and V. P. Smilga, Zh. Éksp. Teor. Fiz. 66, 1201 (1974) [Sov. Phys. JETP 39, 586 (1974)].
V. N. Gorelkin, V. G. Grebinnik, K. I. Gritsai, et al., Yad. Fiz. 56(10), 29 (1993) [Phys. At. Nucl. 56, 1316 (1993)].
V. N. Gorelkin, V. G. Grebinnik, K. I. Gritsai, et al., Pis’ma Zh. Éksp. Teor. Fiz. 63, 539 (1996) [JETP Lett. 63, 566 (1996)].
T. N. Mamedov, V. N. Duginov, D. Gerlach, et al., Pis’ma Zh. Éksp. Teor. Fiz. 68, 61 (1998) [JETP Lett. 68, 64 (1998)].
T. N. Mamedov, D. G. Andrianov, D. Gerlach, et al., Pis’ma Zh. Éksp. Teor. Fiz. 71, 637 (2000) [JETP Lett. 71, 438 (2000)].
V. N. Gorelkin, T. N. Mamedov, and D. V. Rubtsov, Hyperfine Interact. C 1, 191 (1996).
A. S. Baturin and V. N. Gorelkin, Physica B (Amsterdam) 289–290, 578 (2000).
V. N. Gorelkin, T. N. Mamedov, and A. S. Baturin, Physica B (Amsterdam) 289–290, 585 (2000).
G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Nauka, Moscow, 1972; Wiley, New York, 1975).
R. Scheuermann, J. Schmidl, A. Seeger, et al., Hyperfine Interact. 106, 295 (1997).
T. Suzuki, D. F. Measday, and J. P. Roalsvig, Phys. Rev. C 35, 2212 (1987).
H. Neubrand, Phys. Status Solidi B 86, 269 (1978).
Y. Yafet, J. Phys. Chem. Solids 26, 647 (1965).
Yu. G. Semenov, Fiz. Tverd. Tela (Leningrad) 22, 3190 (1980) [Sov. Phys. Solid State 22, 1868 (1980)].
C. Kittel, Introduction to Solid State Physics (Wiley, New York, 1976; Nauka, Moscow, 1978).
V. I. Fistul’, Heavily Doped Semiconductors (Nauka, Moscow, 1967; Plenum, New York, 1969).
P. Ph. Edwards and M. J. Sienko, Phys. Rev. B 17, 2575 (1978).
R. C. Enck and A. Honig, Phys. Rev. 177, 1182 (1969).
I. Ya. Pomeranchuk, Collection of Scientific Works (Nauka, Moscow, 1972), Vol. 1.
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Translated from Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 119, No. 6, 2001, pp. 1159–1165.
Original Russian Text Copyright © 2001 by Mamedov, Andrianov, Herlach, Gorelkin, Gritsai, Kormann, Major, Stoikov, Zimmermann.
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Mamedov, T.N., Andrianov, D.G., Herlach, D. et al. The relaxation rate of the magnetic moment of a shallow acceptor center as a function of impurity concentration in silicon. J. Exp. Theor. Phys. 92, 1004–1009 (2001). https://doi.org/10.1134/1.1385641
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DOI: https://doi.org/10.1134/1.1385641