Skip to main content
SpringerLink
Log in

Two-dimensional electron gas in semimagnetic semiconductor HgMnTe with inverted bands

  • Solids
  • Electronic Properties
  • Published:
Journal of Experimental and Theoretical Physics Aims and scope Submit manuscript

Abstract

The two-dimensional electron gas in the surface layers of HgMnTe with inverted bands is studied for the first time experimentally and theoretically. It is shown that the structure of the investigated capacitance magnetooscillations in HgMnTe MOS structures is entirely similar to that observed in the non-magnetic gapless semiconductor HgCdTe and the sole effect of the exchange interaction is the temperature shift of beat nodes. The information about the exchange parameters is obtained only from modeling the oscillations, because no pronounced changes in the position of oscillations are observed and the separate spin components are not resolved. For the description of the spectrum in the magnetic field, we propose a theory that takes the exchange and spin-orbit interactions into account for materials with direct and inverted bands. A comparison between experiment and theory for different temperatures and exchange interaction parameters is reported. The modeling shows that the spin-orbit splitting by far exceeds the contribution of the exchange interaction. The calculated amplitudes of “partial” oscillations for different spin branches of the spectrum are essentially different in accordance with the difference in the intensities of the corresponding lines in the Fourier spectra of the experimental oscillations.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J. K. Furdina and J. Kossut, Semiconductors and Semi-metals, Ed. by R. K. Willardson and A. C. Beer (Academic, New York, 1988), Vol. 25; J. K. Furdina, J. Vac. Sci. Technol. A 4, 2002 (1986).

    Google Scholar 

  2. J. Slinkman, A. Zhang, and R. E. Doezema, Phys. Rev. B 39, 1251 (1989).

    Article  ADS  Google Scholar 

  3. Y. Takada, K. Arai, and Y. Uemura, in Proceedings of the Fourth International Conference on the Physics of Narrow-Gap Semiconductors, Linz, Austria, 1981 (Springer-Verlag, Berlin, 1982); Lect. Notes Phys. 125, 101 (1982).

    Google Scholar 

  4. V. F. Radantsev, T. I. Deryabina, G. I. Kulaev, et al., Phys. Rev. B 53, 15756 (1996).

    Google Scholar 

  5. A. V. Germanenko, G. M. Min’kov, V. A. Larionova, et al., Phys. Rev. B 54, 1841 (1996).

    ADS  Google Scholar 

  6. G. Grabecki, T. Dietl, J. Kossut, et al., Surf. Sci. 142, 558 (1984).

    Article  Google Scholar 

  7. G. Grabecki, T. Dietl, P. Sobkowicz, et al., Appl. Phys. Lett. 45, 1214 (1984).

    Article  ADS  Google Scholar 

  8. T. Suski, P. Wisniewski, L. Dmowski, et al., J. Appl. Phys. 65, 1203 (1989).

    Article  ADS  Google Scholar 

  9. G. Grabecki, A. Wittlin, T. Dietl, et al., Semicond. Sci. Technol. 8, S95 (1993).

    Article  ADS  Google Scholar 

  10. P. Sobkowicz, G. Grabecki, T. Suski, et al., Acta Phys. Pol. A 75, 39 (1989).

    Google Scholar 

  11. V. F. Radantsev, T. I. Deryabina, L. P. Zverev, et al., Zh. Éksp. Teor. Fiz. 88, 2088 (1985) [Sov. Phys. JETP 61, 1234 (1985)].

    ADS  Google Scholar 

  12. Yu. A. Bychkov and E. I. Rashba, J. Phys. C 17, 6039 (1984).

    Article  ADS  Google Scholar 

  13. V. F. Radantsev, Zh. Éksp. Teor. Fiz. 96, 1793 (1989) [Sov. Phys. JETP 69, 1012 (1989)].

    Google Scholar 

  14. J. Luo, H. Munekata, F. F. Fang, et al., Phys. Rev. B 41, 7685 (1990).

    ADS  Google Scholar 

  15. B. Das, S. Datta, and R. Reifenberger, Phys. Rev. B 41, 8278 (1990).

    ADS  Google Scholar 

  16. G. Engels, J. Lange, Th. Schapers, et al., Phys. Rev. B 55, R1958 (1997).

    Article  ADS  Google Scholar 

  17. J. Nitta, T. Akazaki, H. Takayanagi, et al., Phys. Rev. Lett. 78, 1335 (1997).

    Article  ADS  Google Scholar 

  18. J. P. Heida, B. J. van Wees, J. J. Kuipers, et al., Phys. Rev. B 57, 11911 (1998).

  19. L. Wissinger, U. Rössler, R. Winkler, B. Jusserand, and D. Richards, Phys. Rev. B 58, 15375 (1998).

    Google Scholar 

  20. V. F. Radantsev, Semicond. Sci. Technol. 8, 394 (1993).

    Article  ADS  Google Scholar 

  21. F. Stern and W. E. Howard, Phys. Rev. 163, 816 (1967).

    Article  ADS  Google Scholar 

  22. G. Bastard and C. J. Lewiner, J. Phys. C 13, 1469 (1980).

    ADS  Google Scholar 

  23. D. Heiman, Y. Shapira, S. Foner, et al., Phys. Rev. B 29, 5634 (1984).

    Article  ADS  Google Scholar 

  24. Ya. B. Zel’dovich and V. S. Popov, Usp. Fiz. Nauk 105, 403 (1971) [Sov. Phys. Usp. 14, 673 (1972)].

    Google Scholar 

  25. A. B. Migdal, V. S. Popov, and D. N. Voskresenskii, Zh. Éksp. Teor. Fiz. 72, 834 (1977) [Sov. Phys. JETP 45, 436 (1977)]; A. B. Migdal, Fermions and Bosons in Strong Fields (Nauka, Moscow, 1978).

    Google Scholar 

  26. V. F. Radantsev, Zh. Éksp. Teor. Fiz. 115, 1002 (1999) [JETP 88, 552 (1999)].

    Google Scholar 

  27. N. J. Bassom and R. J. Nicholas, Semicond. Sci. Technol. 7, 810 (1992).

    Article  ADS  Google Scholar 

  28. L. P. Zverev, V. V. Kruzhaev, G. M. Min’kov, et al., Zh. Éksp. Teor. Fiz. 86, 1073 (1984) [Sov. Phys. JETP 59, 626 (1984)].

    Google Scholar 

  29. L. P. Zverev, V. V. Kruzhaev, G. M. Min’kov, et al., Fiz. Tverd. Tela (Leningrad) 26, 2943 (1984) [Sov. Phys. Solid State 26, 1778 (1984)].

    Google Scholar 

  30. J. Furdyna, J. Appl. Phys. 64, R29 (1988).

    Article  ADS  Google Scholar 

  31. I. A. Merkulov, D. R. Yakovlev, A. Keller, et al., Phys. Rev. Lett. 83, 1431 (1999).

    Article  ADS  Google Scholar 

  32. A. K. Bhattacharjee, Phys. Rev. B 58, 15660 (1998).

    Google Scholar 

  33. W. Dobrowolski, von M. Ortenberg, and A. M. Sandauer, in Proceedings of the Fourth International Conference on the Physics of Narrow-Gap Semiconductors, Linz, Austria, 1981 (Springer-Verlag, Berlin, 1982), Lect. Notes Phys. 152, 302 (1982).

    Google Scholar 

  34. V. F. Radantsev, T. I. Deryabina, L. P. Zverev, et al., Zh. Éksp. Teor. Fiz. 91, 1016 (1986) [Sov. Phys. JETP 64, 598 (1986)].

    ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Physics, St. Petersburg State University, St. Petersburg, 198904, Russia

    V. B. Bogevolnov, I. M. Ivankiv & A. M. Yafyasov

  2. Institute of Physics and Applied Mathematics, Ural State University, Yekaterinburg, 620083, Russia

    V. F. Radantsev

Authors
  1. V. B. Bogevolnov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. I. M. Ivankiv
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. M. Yafyasov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. F. Radantsev
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

From Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 119, No. 1, 2001, pp. 154–165.

Original English Text Copyright © 2001 by Bogevolnov, Ivankiv, Yafyasov, Radantsev.

This article was submitted by the authors in English.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Bogevolnov, V.B., Ivankiv, I.M., Yafyasov, A.M. et al. Two-dimensional electron gas in semimagnetic semiconductor HgMnTe with inverted bands. J. Exp. Theor. Phys. 92, 135–145 (2001). https://doi.org/10.1134/1.1348469

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1348469

Keywords

Search

Navigation