Abstract
The pseudopotential method and supercell (8×8×8) approach were used to study localized electron states introduced by tetrahedral clusters of gallium atoms into the band gap of GaAs. With increasing cluster size, the Fermi energy (E F ) rapidly reaches its limiting value close to the Schottky barrier height at the planar metal-semiconductor interface. The gap between the completely filled and empty size-quantization levels is 0.06 eV for the largest cluster of 159 gallium atoms. The energy position and “tails” of metal-induced gap states in the vicinity of E F are governed by the outermost layers of GaAs antisite defects.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 1, 2001, pp. 84–88.
Original Russian Text Copyright © 2001 by Grinyaev, Chaldyshev.
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Grinyaev, S.N., Chaldyshev, V.A. Deep levels related to gallium atom clusters in GaAs. Semiconductors 35, 86–90 (2001). https://doi.org/10.1134/1.1340295
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DOI: https://doi.org/10.1134/1.1340295