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Effect of sulfur and selenium on the surface relief of insulating films and electrical characteristics of metal-insulator-p-GaAs structures

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

The effect of S and Se atoms on the surface relief of insulating layers deposited on the GaAs substrate was investigated. It was demonstrated that the incorporation of chalcogens in the surface region of a semiconductor leads to smoothing of the surface relief of insulating films. Simultaneous decrease in the density of surface states at the insulator-p-GaAs interface was observed. The resulting effect of the S and Se atoms depends on the insulating material.

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References

  1. V. N. Bessolov and M. V. Lebedev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32(11), 1281 (1998) [Semiconductors 32, 1141 (1998)].

    Google Scholar 

  2. B. I. BednyÏ, Soros. Obraz. Zh. 7, 141 (1998).

    Google Scholar 

  3. V. I. Gaman, V. M. Kalygina, and A. V. Panin, Solid-State Electron. 43, 583 (1999).

    Article  Google Scholar 

  4. É. V. Buts, L. N. Vozmilova, V. I. Mitin, et al., Élektron. Tekh., Ser. Mater. 9, 46 (1982).

    Google Scholar 

  5. L. V. Khramova, T. P. Smirnova, and E. G. Eremina, Neorg. Mater. 28, 1662 (1992).

    Google Scholar 

  6. A. V. Panin and N. A. Torkhov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 698 (2000) [Semiconductors 34, 671 (2000)].

    Google Scholar 

  7. V. I. Gaman, N. N. Ivanova, V. M. Kalygina, and E. B. Sudakova, Izv. Vyssh. Uchebn. Zaved., Fiz. 11, 99 (1992).

    Google Scholar 

  8. E. D. Vasil’eva, M. N. Kolotov, V. I. Sokolov, et al., Mikroélektronika 21, 74 (1992).

    Google Scholar 

  9. V. A. Brazhnik, T. A. Dolgova, and A. B. Spiridonov, Élektron. Tekh., Ser. Mikroélektron. Ustroistva 1, 48 (1990).

    Google Scholar 

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Authors and Affiliations

  1. Institute of Strength Physics and Materials Science, Siberian Division, Russian Academy of Sciences, Akademicheskii pr. 2/1, Tomsk, 634055, Russia

    A. V. Panin & A. R. Shugurov

  2. Kuznetsov Physicotechnical Institute, pl. Revolyutsii 1, Tomsk, 634050, Russia

    V. M. Kalygina

Authors
  1. A. V. Panin
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  2. A. R. Shugurov
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  3. V. M. Kalygina
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Additional information

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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 1, 2001, pp. 78–83.

Original Russian Text Copyright © 2001 by Panin, Shugurov, Kalygina.

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Panin, A.V., Shugurov, A.R. & Kalygina, V.M. Effect of sulfur and selenium on the surface relief of insulating films and electrical characteristics of metal-insulator-p-GaAs structures. Semiconductors 35, 80–85 (2001). https://doi.org/10.1134/1.1340294

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  • DOI: https://doi.org/10.1134/1.1340294

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