Abstract
The shape of the band-to-band photoluminescence spectrum for a graded-gap semiconductor in conditions of nonequilibrium charge-carrier transport affected by a built-in quasi-electric field E=e −1∇E g was calculated. It was demonstrated that the distortion of the short-wavelength region of the emission spectra occurs due to the coordinate dependence on the radiative recombination probability in the wide-gap region of the crystal. The calculations were confirmed by measuring the photoluminescence spectra for the AlxGa1−x As undoped (n≤1016 cm−3) graded-gap solid solutions with E varying in the range of 90–650 V/cm at 300 K.
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References
Zh. I. Alferov, V. M. Andreev, V. I. Korol’kov, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 3(2), 541 (1969) [Sov. Phys. Semicond. 3, 460 (1969)].
G. V. Tsarenkov, Fiz. Tekh. Poluprovodn. (Leningrad) 13(6), 1095 (1979) [Sov. Phys. Semicond. 13, 641 (1979)].
R. G. Roedel and V. G. Keramidas, J. Appl. Phys. 50(10), 6353 (1979).
V. F. Kovalenko, G. P. Peka, and L. G. Shepel’, Fiz. Tekh. Poluprovodn. (Leningrad) 11, 208 (1977) [Sov. Phys. Semicond. 11, 1224 (1977)].
V. F. Kovalenko, G. P. Peka, and L. G. Shepel’, Fiz. Tekh. Poluprovodn. (Leningrad) 12(12), 1421 (1978) [Sov. Phys. Semicond. 12, 839 (1978)].
V. F. Kovalenko, G. P. Peka, and L. G. Shepel’, Fiz. Tekh. Poluprovodn. (Leningrad) 12(9), 1851 (1978) [Sov. Phys. Semicond. 12, 1099 (1978)].
A. I. Bazyk, V. F. Kovalenko, and G. P. Peka, Ukr. Fiz. Zh. 27(11), 1728 (1982).
A. I. Bazyk, V. F. Kovalenko, G. P. Peka, et al., Zh. Prikl. Spektrosk. 42(10), 441 (1985).
A. I. Bazyk, V. F. Kovalenko, and G. P. Peka, Ukr. Fiz. Zh. 27(7), 1007 (1982).
V. V. Gutov, A. N. Imenkov, R. F. Kazarinov, et al., Pis’ma Zh. Tekh. Fiz. 1, 386 (1975) [Sov. Tech. Phys. Lett. 1, 184 (1975)].
V. V. Gutov, A. N. Imenkov, B. S. Kondrat’ev, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 13(9), 1336 (1979) [Sov. Phys. Semicond. 13, 782 (1979)].
R. F. Kazarinov and R. A. Suris, Fiz. Tekh. Poluprovodn. (Leningrad) 9(1), 12 (1975) [Sov. Phys. Semicond. 9, 6 (1975)].
R. F. Kazarinov and G. V. Tsarenkov, Fiz. Tekh. Poluprovodn. (Leningrad) 10(2), 297 (1976) [Sov. Phys. Semicond. 10, 178 (1976)].
O. V. Konstantinov and G. V. Tsarenkov, Fiz. Tekh. Poluprovodn. (Leningrad) 10(4), 720 (1976) [Sov. Phys. Semicond. 10, 427 (1976)].
V. F. Kovalenko, Avtometriya, No. 6, 54 (1980).
A. I. Bazyk, V. F. Kovalenko, A. I. Kurbangaleev, and G. P. Peka, Optoélektron. Poluprovodn. Tekh., No. 15, 42 (1989).
S. M. Ryvkin, Photoelectric Effects in Semiconductors (Fizmatgiz, Leningrad, 1963; Consultants Bureau, New York, 1964).
M. Konagai and K. Takahashi, Solid-State Electron. 19, 259 (1976).
V. F. Kovalenko, G. P. Peka, and L. G. Shepel’, Fiz. Tekh. Poluprovodn. (Leningrad) 14(7), 1350 (1980) [Sov. Phys. Semicond. 14, 798 (1980)].
F. P. Kesamanly, V. F. Kovalenko, I. E. Maronchuk, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 12(7), 1318 (1978) [Sov. Phys. Semicond. 12, 780 (1978)].
O. K. Gorodnichenko, N. K. Dryapiko, V. F. Kovalenko, and G. P. Peka, Ukr. Fiz. Zh. 27(2), 267 (1982).
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 1, 2001, pp. 53–57.
Original Russian Text Copyright © 2001 by Bazyk, Kovalenko, Mironchenko, Shutov.
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Bazyk, A.I., Kovalenko, V.F., Mironchenko, A.Y. et al. Effect of the charge-carrier drift in a built-in quasi-electric field on the emission spectrum of the graded-gap semiconductors. Semiconductors 35, 54–58 (2001). https://doi.org/10.1134/1.1340289
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DOI: https://doi.org/10.1134/1.1340289