Abstract
An investigation was made to determine how a regular relief on the silicon surface influences gettering in silicon-silicon-dioxide structures. The regular relief was created by a photolithographic technique before oxidation and comprised an orthogonal network of overlapping bands. The gettering was determined from the isothermal relaxation of the capacitance of a silicon-silicon-dioxide structure after switching from strong inversion to even stronger inversion. It is shown that a regular relief at the silicon-silicon-dioxide interface is an effective getter at a depth of several hundred micron.
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Pis’ma Zh. Tekh. Fiz. 25, 75–80 (January 12, 1999)
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Berman, L.S., Grekhov, I.V., Kostina, L.S. et al. Regular relief on a silicon surface as a structural defect getter. Tech. Phys. Lett. 25, 32–34 (1999). https://doi.org/10.1134/1.1262345
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DOI: https://doi.org/10.1134/1.1262345