Abstract
The photoluminescence of two types of heterostructural silicon solar cells with different passivation of crystalline silicon layer was studied. The contributions of various processes to the photoluminescence are revealed by measuring the photoluminescence at low temperatures. It is shown that the dopant concentration in crystalline silicon for solar cells based on an amorphous silicon/crystalline silicon heterojunction can be estimated from photoluminescence spectra. The correlation between the photoluminescence kinetics of heterostructural silicon solar cells and the photoconversion efficiency is established. An effective method to determine the quality of surface doping in crystalline silicon solar cells based on an amorphous silicon/crystalline silicon heterojunction is proposed.
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Acknowledgments
The authors thank E.I. Terukov for the provided samples of solar cells.
Funding
The work was performed with financial support from the Russian Foundation for Basic Research (grant no. 16-02-01150, Sections 1–3) and the Russian Science Foundation (grant no. 17-72-10265, Sections 4–6).
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Russian Text © The Author(s), 2019, published in Vestnik Moskovskogo Universiteta, Seriya 3: Fizika, Astronomiya, 2019, No. 4, pp. 32–35.
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Matsukatova, A.N., Grigoreva, L.N., Savin, K.A. et al. Photoluminescence of a-Si/c-Si Heterojunction Solar Cells with Different Intrinsic Thin Layers. Moscow Univ. Phys. 74, 369–373 (2019). https://doi.org/10.3103/S0027134919040131
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DOI: https://doi.org/10.3103/S0027134919040131