Abstract
The numerical analysis of the charge-carrier transport in lateral double-collector magnetotransistors is presented. The final concentration distribution of the carriers injected in the base of the magnetotransistor under the influence of the magnetic field as well as the emitter-size dependence of the device sensitivity were calculated.
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I. M. Vikulin, M. A. Glauberman, and N. A. Kanishcheva, Fiz. Tekh. Poluprovodn. (Leningrad) 11, 645 (1977) [Sov. Phys. Semicond. 11, 377 (1977)].
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I. M. Vikulin, M. A. Glauberman, N. A. Kanishcheva, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 15, 399 (1981) [Sov. Phys. Semicond. 15, 229 (1981)].
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 5, 2000, pp. 622–624.
Original Russian Text Copyright © 2000 by Glauberman, Kozel, Nakhabin.
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Glauberman, M.A., Kozel, V.V. & Nakhabin, A.V. Charge-carrier transport in a double-collector magnetotransistor. Semiconductors 34, 603–605 (2000). https://doi.org/10.1134/1.1188036
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DOI: https://doi.org/10.1134/1.1188036