Abstract
Studies of the photocapacitance of a-As2Se3 films reveal that its relaxation has a fast and a slow component, leading to two distinct spectra for the density and absorption cross section of deep levels, with different thresholds and magnitudes. The authors associate the fast component of the relaxation with photoemission of holes from D + centers, and speculate on the possible nature of the slow component as well.
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References
Electronic Phenomena in Chalcogenide-Glass Semiconductors, edited by K. D. Tsendin [in Russian], A. F. Ioffe Physicotechnical Inst. Publ., Russ. Acad. Sci., St. Petersburg, 1996.
G. J. Adriaenssens, Philos. Mag. B 62, 79 (1990).
L. S. Berman and A. A. Lebedev, Capacitive Deep-Level Spectroscopy in Semiconductors [in Russian], Nauka, Leningrad, 1981.
S. D. Shutov and A. A. Simashkevich, J. Non-Cryst. Solids 176, 253 (1994).
M. Kuhn, Solid-State Electron. 13, 873 (1970).
R. A. Street, Phys. Rev. B 17, 3984 (1978).
G. J. Adriaenssens, M. Hammam, H. Michiel, and J. M. Marshall, Solid State Commun. 45, 465 (1983).
S. G. Bishop, U. Strom, and P. C. Taylor, Phys. Rev. B 15, 2278 (1977).
J. Tauc and A. Menth, J. Non-Cryst. Solids 8–10, 569 (1972).
D. Monroe and M. A. Kastner, Physics of Disordered Materials (N. Y.-London, 1985) p. 553.
J. A. Freitas, Jr., U. Strom, and S. G. Bishop, Phys. Rev. B 35, 7780 (1987).
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Fiz. Tekh. Poluprovodn. 33, 863–865 (July 1999)
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Vasiliev, I.A., Shutov, S.D. Photocapacitance relaxation in amorphous As2Se3 films. Semiconductors 33, 792–794 (1999). https://doi.org/10.1134/1.1187783
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DOI: https://doi.org/10.1134/1.1187783