Abstract
Electron beams of 0.5, 1.5, 2.0, and 5.0 MeV were used to irradiate n-Si diodes to fluences of 5.5 × 1013, 1.7 × 1014, and 3.3 × 1014 e cm−2. The forward voltage drop, minority carrier lifetime, and deep level transient spectroscopy (DLTS) characteristics of silicon p–n junction diodes before and after irradiation were compared. At the fluence of 3.3 × 1014 e cm−2, the forward voltage drop increased from 1.25 V at 0.5 MeV to 7.96 V at 5.0 MeV, while the minority carrier lifetime decreased significantly from 7.09 μs at 0.5 MeV to 0.06 μs at 5. 0 MeV. Six types of changes in the energy levels in DLTS spectra were analyzed and discussed.
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This work was supported by the Beijing education and scientific research department (No. KM201510005008).
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Guo, CS., Wang, RM., Zhang, YW. et al. Identifying defect energy levels using DLTS under different electron irradiation conditions. NUCL SCI TECH 28, 183 (2017). https://doi.org/10.1007/s41365-017-0331-7
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DOI: https://doi.org/10.1007/s41365-017-0331-7