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Effect of low-energy electron irradiation on the optical properties of structures containing multiple InGaN/GaN quantum well

  • XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014
  • Published:
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Abstract

Data on the temperature dependence of the cathodoluminescence intensity in multiple InGaN/GaN quantum-well structures in the temperature range 80–300 K are reported. Unirradiated structures and structures irradiated with electrons with subthreshold energy are studied. It is shown that, upon irradiation, the temperature dependence becomes weaker. From analysis of the results obtained in this study and previously, it can be suggested that electron irradiation initiates the relaxation of strains produced in quantum wells due to the InGaN-GaN lattice mismatch.

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Authors and Affiliations

  1. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    P. S. Vergeles & E. B. Yakimov

  2. National University of Science and Technology “MISIS”, Moscow, 119049, Russia

    E. B. Yakimov

Authors
  1. P. S. Vergeles
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  2. E. B. Yakimov
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Correspondence to E. B. Yakimov.

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Original Russian Text © P.S. Vergeles, E.B. Yakimov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 2, pp. 149–154.

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Vergeles, P.S., Yakimov, E.B. Effect of low-energy electron irradiation on the optical properties of structures containing multiple InGaN/GaN quantum well. Semiconductors 49, 143–148 (2015). https://doi.org/10.1134/S1063782615020219

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  • DOI: https://doi.org/10.1134/S1063782615020219

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