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Properties of periodic α-Si:H/a-SiNx:H structures obtained by nitridization of amorphoussilicon layers

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Abstract

The kinetics of nitridization of a-Si:H layers, the properties of the structures that are formed and a-Si:H in them have been investigated. The changes occurring in the resistance of the a-Si:H layers in the course of nitridization are described in terms of the competition between doping, transport, and change in the thickness of the remaining a-Si:H layer. The experimental data on the band spectrum of superlattices with a-Si:H and a-SiNx:H layer thicknesses ∼35 Å and ∼5 Å, respectively, are in agreement with calculations in a model of interacting quantum wells with m*=(0.36±0.1)m 0. Comparison of the properties of superlattices obtained by deposition of successive layers and nitridization of the a-Si:H layers showed that the latter can have a higher “structural perfection.”

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Authors and Affiliations

  1. Scientific-Research Institute of Mechanics and Physics, N. G. Chernyshevskii Saratov State University, 410026, Saratov, Russia

    D. I. Bilenko, O. Ya. Belobrovaya, Yu. N. Galishnikova, É. A. Zharkova, N. P. Kazanova, O. Yu. Koldobanova & E. I. Khasina

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  1. D. I. Bilenko
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  2. O. Ya. Belobrovaya
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  3. Yu. N. Galishnikova
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  4. É. A. Zharkova
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  5. N. P. Kazanova
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  6. O. Yu. Koldobanova
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  7. E. I. Khasina
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Fiz. Tekh. Poluprovodn. 32, 329–333 (March 1998)

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Bilenko, D.I., Belobrovaya, O.Y., Galishnikova, Y.N. et al. Properties of periodic α-Si:H/a-SiNx:H structures obtained by nitridization of amorphoussilicon layers. Semiconductors 32, 297–301 (1998). https://doi.org/10.1134/1.1187381

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  • DOI: https://doi.org/10.1134/1.1187381

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