Abstract
The phase composition and optical properties of hydrogenated amorphous films of silicon suboxide (a-SiO x :H) with silicon nanoclusters are studied. Ultrasoft X-ray emission spectroscopy show that silicon- suboxide films with various oxidation states and various amorphous silicon-cluster contents can be grown using dc discharge modulation. In films with an ncl-Si content of ∼50%, the optical-absorption edge is observed, whose extrapolation yields an optical band gap estimate of ∼3.2–3.3 eV. In the visible region, rather intense photoluminescence bands are observed, whose peak positions indicate the formation of silicon nanoclusters 2.5–4.7 nm in size in these films, depending on the film composition.
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Original Russian Text © V.A. Terekhov, E.I. Terukov, Yu.K. Undalov, E.V. Parinova, D.E. Spirin, P.V. Seredin, D.A. Minakov, E.P. Domashevskaya, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 2, pp. 212–217.
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Terekhov, V.A., Terukov, E.I., Undalov, Y.K. et al. Composition and optical properties of amorphous a-SiO x :H films with silicon nanoclusters. Semiconductors 50, 212–216 (2016). https://doi.org/10.1134/S1063782616020251
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DOI: https://doi.org/10.1134/S1063782616020251