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Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates

  • Atomic Structure and Non-Electronic Properties of Semiconductors (Mechanical and Thermal Properties, Diffusion, etc.)
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Abstract

The electrical properties and low-temperature (4.2 K) photoluminescence of heavily doped n-type layers produced by silicon and silicon/phosphorus implantation into undoped and indiumdoped Czochralski grown semi-insulating GaAs substrates have been investigated. It is found that Si+P co-implantation results in suppression of deep levels in the anion sublattice, an increase of donor activation efficiency, and a sharper carrier concentration profile in both types of substrates. The use of indium-doped substrates enhances radiation defect annealing, but does not change the donor activation efficiency.

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Authors and Affiliations

  1. P. N. Lebedev Physical Institute, Russian Academy of Sciences, 117924, Moscow, Russia

    N. N. Dymova

  2. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. E. Kunitsyn & V. V. Chaldyshev

  3. State Institute of Rare Metals, 109017, Moscow, Russia

    A. V. Markov

Authors
  1. N. N. Dymova
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  2. A. E. Kunitsyn
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  3. V. V. Chaldyshev
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  4. A. V. Markov
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Additional information

Fiz. Tekh. Poluprovodn. 31, 1409–1413 (December 1997)

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Dymova, N.N., Kunitsyn, A.E., Chaldyshev, V.V. et al. Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates. Semiconductors 31, 1217–1220 (1997). https://doi.org/10.1134/1.1187296

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  • DOI: https://doi.org/10.1134/1.1187296

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