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Optical Properties

Fundamental Absorption Edge and Emission Properties of β-Ga2O3

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Gallium Oxide

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 293))

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Abstract

This chapter provides fundamental optical properties of β-Ga2O3. Valence band ordering was investigated by polarized transmittance and reflectance measurements. Anisotropic optical properties were also investigated by spectroscopic ellipsometry measurements. The optical anisotropy in a biaxial crystal as well as the gradual increase in the absorption coefficient were recognized as origins of the scattering in optical bandgap energies in a range 4.5–5.0 eV. Temperature-dependent exciton resonance energies were studied by using polarized reflectance measurement. The large changes in the exciton resonance energies with temperature were found to be originated from the exciton—longitudinal optical phonon interaction. Correlation between blue luminescence (BL) intensity and formation energy of oxygen vacancy (VO) was found by measuring temperature-dependent cathodoluminescence spectra. Suppression of the BL band in the heavily nitrogen-doped epitaxial films was shown as an evidence for the decrease in the VO concentration by N-doping and resultant high resistivity in the N-doped epitaxial films.

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Acknowledgements

The author would like to acknowledge Dr. M. Higashiwaki for introducing and continuously giving me the opportunity to work on the β-Ga2O3. The author would like to thank Dr. K. Sasaki and Dr. A. Kuramata of Novel Crystal Technology Inc. and Dr. K. Goto, Dr. T. Masui, and Dr. S. Yamakoshi of Tamura Corporation for preparation of β-Ga2O3 crystals grown by the FZ and EFG methods. The author is grateful to Dr. Y. Nakata and Dr. M. Higashiwaki for growths of the series of N-doped epitaxial films by RF-MBE. The author would like to thank Dr. T. Sato of J. A. Woollam Japan Co., Inc., for technical support on the IRSE measurements. The author is truly grateful to Prof. T. Yamaguchi, Prof. T. Honda, Prof. Y. Itoh, Prof. H. Nagai, and Prof. M. Sato of Kogakuin University for their fruitful discussion and continuous support on the experiment. The author would like to acknowledge Prof. M. Sugiyama of Tokyo University of Science and Prof. S.F. Chichibu of Tohoku University for their continuous encouragements.

This work was supported in part by Grants-in-Aid for Scientific Research Nos. 25390071, 25289093, 25420341, and 25706020 from the Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT).

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Authors and Affiliations

  1. Department of Applied Physics, School of Advanced Engineering and Department of Electrical Engineering and Electronics, Kogakuin University, 2665-1, 192-0015, Hachioji, Tokyo, Japan

    Takeyoshi Onuma

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Correspondence to Takeyoshi Onuma .

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Editors and Affiliations

  1. National Institute of Information and Communications Technology, Koganei, Tokyo, Japan

    Masataka Higashiwaki

  2. Graduate School of Engineering, Kyoto University, Katsura, Kyoto, Japan

    Shizuo Fujita

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Onuma, T. (2020). Optical Properties. In: Higashiwaki, M., Fujita, S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293. Springer, Cham. https://doi.org/10.1007/978-3-030-37153-1_27

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