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Photosensitivity of InP/CdS heterostructures in linearly polarized light

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Abstract

Measurements have been made of the photosensitivity of (p +-p −)-InP/n +-CdS structures formed by the growth of indium phosphide and cadmium sulfide films on p +-InP substrates with (100) crystallographic orientation. These structures exhibit a photosensitivity S i ⋍0.13A/W in the spectral range from 1.3 to 2.4 eV at T=300 K. Polarizational photosensitivity was observed for oblique incidence of linearly polarized light on the CdS surface of these structures. The induced photopleochroism of these structures is governed by the angle of incidence θ. The photopleochroism increases proportionally to θ2 and its maximum value is found to be ∼50% at θ⋍75–80°. The maximum azimuthal photosensitivity was found to be ∼0.13A/W·deg. Structures consisting of CdS deposited on InP can be used as polarimetric photodetectors.

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Authors and Affiliations

  1. State Institute of Moldova, Kishinev, Moldova

    V. M. Botnaryuk, L. V. Gorchak & V. N. Pleshka

  2. St. Petersburg State Technical University, 195254, St. Petersburg, Russia

    V. Yu. Rud’

  3. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    Yu. V. Rud’

Authors
  1. V. M. Botnaryuk
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  2. L. V. Gorchak
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  3. V. N. Pleshka
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  4. V. Yu. Rud’
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  5. Yu. V. Rud’
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Fiz. Tekh. Poluprovodn. 31, 305–308 (February 1997)

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Botnaryuk, V.M., Gorchak, L.V., Pleshka, V.N. et al. Photosensitivity of InP/CdS heterostructures in linearly polarized light. Semiconductors 31, 194–196 (1997). https://doi.org/10.1134/1.1187106

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  • DOI: https://doi.org/10.1134/1.1187106

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