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Trapping of hot electrons at repulsive centers under transverse runaway conditions

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Abstract

The trapping of hot electrons at repulsive centers under transverse runaway conditions is calculated. The dependence of the trapping probability on the Sommerfeld factor and the exponential dependence of the trapping probability on the energy of the tunneled electron are taken into account. It is shown that the latter dependence plays an important role near the threshold of transverse runaway of hot electrons, while far from the threshold the Bonch-Bruevich trapping probability is a good approximation.

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Authors and Affiliations

  1. Tbilisi State University, 380028, Tbilisi, Georgia

    Z. S. Kachlishvili, Kh. Z. Kachlishvili & F. G. Chumburidze

Authors
  1. Z. S. Kachlishvili
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  2. Kh. Z. Kachlishvili
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  3. F. G. Chumburidze
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Additional information

Fiz. Tekh. Poluprovodn. 31, 268–270 (February 1997)

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Kachlishvili, Z.S., Kachlishvili, K.Z. & Chumburidze, F.G. Trapping of hot electrons at repulsive centers under transverse runaway conditions. Semiconductors 31, 161–163 (1997). https://doi.org/10.1134/1.1187099

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  • DOI: https://doi.org/10.1134/1.1187099

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