Abstract
An unusual absorption “band” with a giant half-width has been detected in the infrared absorption spectra of silicon obtained by zone melting and subjected to cyclic heat treatment at 1250 °C with rapid cooling after each anneal and with partial removal of the thermal oxide in each cycle. A model explaining the observed features of the spectrum in terms of the transformation, occurring during heat treatment of impurity nanoprecipitates contained in the initial silicon and in terms of the microblock structure of the material is proposed.
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Fiz. Tekh. Poluprovodn. 31, 247–249 (February 1997)
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Zhdanovich, N.S. Unusual absorption “band” in the infrared spectrum of silicon annealed at high temperature and then rapidly cooled. Semiconductors 31, 143–145 (1997). https://doi.org/10.1134/1.1187096
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DOI: https://doi.org/10.1134/1.1187096