Abstract
We investigate neutron irradiation-induced defects in p-type Czochralski silicon (Cz–Si) subjected initially to heat treatments under high hydrostatic pressure (HTHP), by means of infrared spectroscopy (IR). A pair of bands at 592 and 883 cm−1 arises in the spectra immediately after irradiation and disappears upon isochronal annealing just below 350 °C in as-grown Si, although they disappear at a smaller temperature ~ 280 °C in the HTHP treated Si. Another pair of bands at 535 and 556 cm−1 arises in the spectra at ~ 320 °C and disappears at ~ 430 °C in as-grown Si, although they show a shift in their thermal stability of ~ 50 °C towards lower temperatures in HTHP Si. The activation energies characterizing their annihilation were found smaller in the HTHP Si, for each one of the four bands correspondingly. It is argued that the applied hydrostatic pressure affects the annealing behavior of the bands promoting their annihilation. From the LVM frequency values, the temperature range they appear and their annealing behavior we tentatively correlate them with structures involving self-interstitial clusters, presumably perturbed by an impurity atom. Four other bands at 562, 642, 654 and 678 cm−1 show similar thermal stability arising in the spectra in the course of the isochronal annealing at ~ 250 °C and disappearing at ~ 400 °C, both in as-grown and in HTHP Si. However, the changes exhibited in the values of the activation energies of the bands between the HTHP and the as-grown Si, suggest that may not all of them have exactly the same origin, at least the 678 cm−1 band. The origin of the above family of bands is discussed in regards with previous works reported in the literature. Connection with complexes comprising boron atoms and self interstitials, in short (Bn–SiIm), was considered.
Similar content being viewed by others
References
S.G. Cloutier, P.A. Kossyrev, J. Xu, Nat. Mater. 4, 877 (2005)
E. Rotem, J.M. Shainline, J.M. Xu, Appl. Phys. Lett. 91, 051127 (2007)
G. Kramberger, Nucl. Instrum. Methods A583, 49 (2007)
D.D. Berhanuddin, M.A. Lourenço, R.M. Gwilliam, K.P. Homewood, Adv. Funct. Mater. 22, 2709 (2012)
C. Gao, X. Ma, J. Zhao, D. Yang, J. Appl. Phys. 113, 093511 (2013)
K. Nordlund, S.J. Zinkle, A.E. Sand, F. Granberg, R.S. Averback, R.E. Stoller, T. Suzudo, L. Malerba, F. Banhart, W.J. Weber, F. Willaime, S.L. Dudarev, D. Simeone, J. Nucl. Mater. 512, 450 (2018)
K. Sueoka, E. Kamiyama, P. Spiewak, J. Vanhellemont, ECS J. Solid State Sci. Technol. 5, 3176 (2016)
G.D. Watkins, Mater. Sci. Semicond. Process. 3, 227 (2000)
Y.-H. Lee, N.N. Gerasimenko, J.W. Corbett, Phys. Rev. B 14, 4506 (1976)
Y.-H. Lee, Appl. Phys. Lett. 73, 1119 (1998)
A. Carvalho, R. Jones, J. Continho, P.R. Briddon, Phys. Rev. B 72, 155208 (2005)
C.A. Londos, G. Antonaras, A. Chroneos, J. Appl. Phys. 114, 043502 (2013)
C.A. Londos, L.G. Fytros, G.J. Georgiou, Defect Diffus. Forum 171–172, 1 (1999)
C.A. Londos, Phys. Status Solidi (a) 102, 639 (1987); C.A. Londos, ibid 92, 609 (1985)
M. Potsidi, C.A. Londos, J. Appl. Phys. 100, 033523 (2006)
C.A. Londos, D.N. Aliprantis, G. Antonaras, M.S. Potsidi, T. Angeletos, J. Appl. Phys. 123, 145702 (2018)
H. Wang, A. Chroneos, C.A. Londos, E.N. Sgourou, U. Schwingenschlogl, Sci. Rep. 4, 4909 (2014)
K. Laithwaite, R.C. Newman, D.H.-J. Totterdell, J. Phys. C 8, 236 (1975)
N. Fukata, T. Ohori, M. Suezawa, H. Takhahashi, J. Appl. Phys. 91, 5891 (2002)
D. Pierreux, A. Stesmans, Phys. Rev. B 68, 193208 (2003)
A. Borghesi, B. Pivac, A. Sassella, A. Stella, J. Appl. Phys. 77, 4169 (1995)
V.V. Emtsev Jr., C.A.J. Ammerlaan, V.V. Emtsev, G.A. Oganesian, B.A. Andreev, D.I. Knritsgn, A. Misiuk, B. Surma, C.A. Londos, Phys. Status Solidi B 235, 75 (2003)
A. Misiuk, J. Bak-Misiuk, A. Bacez, A. Romano-Rondriguez, I.V. Antonova, V.P. Popov, C.A. Londos, J. Jun, Int. J. Hydrog. Energy 26, 483 (2001)
V. Gusakov, L. Murin, Phys. B 340–342, 773 (2003)
M.D. McCluskey, J. Appl. Phys. 87, 3593 (2000)
A.Misuik, in Early Stages of Oxygen Precipitation in Silicon, (NATO ASI Series, 3. High Technology), ed. by R. Jones (Kluwer Academic Publishers, Dordrecht, 1989), p. 485
C. Cui, X. Ma, D. Yang, J. Appl. Phys. 104, 123523 (2008)
P. Wang, C. Cui, X. Yu, D. Yang, Mater. Sci. Semicond. Proc. 74, 369 (2018)
A. Misiuk, Mater. Phys. Mech. 1, 119 (2000)
L.I. Murin, B.G. Svensson, J.L. Lindstrom, V.P. Markevich, C.A. Londos, Solid State Phenom. 156-158, 129 (2010)
P. Dong, P. Yang, X. Yu, L. Chen, Y. Ma, M. Li, G. Dai, J. Zhang, J. Electron. Mater. 47, 5019 (2018)
E.V. Lavrov, L. Hoffman, B.B. Nielsen, Phys. Rev. B 60, 8081 (1999)
C.A. Londos, G.D. Antonaras, M.S. Potsidi, D.N. Aliprantis, A. Misiuk, J. Mater. Sci. 18, 721 (2007)
G. Davies, R.C. Newman, in Handbook on Semiconductors, Materials Properties and Preparations, ed. by T.S. Moss, S. Mahajan (Elsevier, Amsterdam, 1994), p. 1557
G. Davies, Phys. Rep. 176, 83 (1989)
G. Davies, S. Hayama, L. Murin, R. Klause-Rehberg, V. Bondarenko, C. Davia, A. Karpenko, Phys. Rev. B 73, 165202 (2006)
N. Burger, K. Thonke, R. Sauer, Phys. Rev. Lett. 22, 1645 (1984)
Y. Yang, J. Bao, C. Wang, M.J. Aziz, J. Appl. Phys. 107, 123109 (2010)
C. Chartrand, L. Bergeron, K.J. Morse, H. Riemann, N. Abrosimov, P. Becher, H.-J. Pohl, S. Simmons, M.L.W. Thewalt, Phys. Rev. B 98, 195201 (2018)
D. Pierreux, A. Stesmans, Phys. Rev. B 71, 115204 (2005)
S. Hayama, G. Davies, K.M. Itoh, J. Appl. Phys. 96, 1754 (2004)
M. Cogoni, B.P. Uberuaga, A.F. Voter, L. Colombo, Phys. Rev. B 71, 121203(R) (2005)
M. Posselt, F. Gao, D. Zwicker, Phys. Rev. B 71, 245202 (2005)
G.M. Lopez, V. Fiorentine, Phys. Rev. B 69, 155206 (2004)
D.A. Richi, J. Kim, S.A. Barr, K.R.A. Hazard, J.W. Wilkins, Phys. Rev. Lett. 92, 045501 (2004)
V.D. Tkachev, A.A.V. Mudryi, N.S. Minaev, Phys. Status Solidi (a) 81, 313 (1984)
Y.H. Lee, J.C. Corelli, J.W. Corbett, Phys. Lett. 60A, 55 (1977)
E.A. Tolkacheva, V.P. Markrvich, L.I. Murin, Semiconductors 52, 1097 (2018)
T. Mchedlidze, M. Suezawa, Solid State Phenom. 95–96, 129 (2004)
B.J. Coomer, J.P. Goss, R. Jones, S. Oberg, P.R. Briddon, J. Phys. 13, L1 (2001)
M. Nakamura, S. Murakani, J. Appl. Phys. 94, 3075 (2003)
S. Libertino, S. Coffa, J.L. Benton, Phys. Rev. B 63, 195206 (2001)
D.C. Schmidt, B.G. Svensson, M. Seibt, C. Jagadish, G. Davies, J. Appl. Phys. 88, 2309 (2000)
R.C. Newman, D.H.J. Totterdell, J. Phys. C 8, 3944 (1975)
N. Fukuoka, K. Nakata, M. Honda, K. Atobe, T. Kawakubo, in Defect Control in Semiconductors, ed. by K. Sumino (Elseviers Science Publishers, Amsterdam, 1990), p. 547
I.V. Antonova, C.A. Londos, J. Bak-Misiuk, A.K. Gutakovskii, M.S. Potsidi, A. Misiuk, Phys. Status Solidi (a) 199, 207 (2003)
J. Jung, M. Lefeld-Sosnowska, Philos. Mag. 50, 233 (1984)
A. Jayaraman, Rev. Mod. Phys. 55, 65 (1983)
J. Dzelme, I. Ertsinsh, B. Zapol, A. Misiuk, J. Alloys Compd. 286, 254 (1999)
M.L. Cohen, Phys. Status Solidi (a) 235, 221 (2003)
N.E. Christensen, I. Gorczyca, A. Svane, N. Gonzalez Szwacki, P. Boguslawski, Phys. Status Solidi (a) 235, 374 (2003)
K. Sueoka, E. Kamiyama, H. Kariyazaki, J. Venhellemont, Phys. Status Solidi (c) 9, 1947 (2012)
F.G. Manjon, D. Errandonea, Phys. Status Solidi (b) 246, 9 (2009)
A. Misiuk, H.B. Surma, J. Bac-Misiuk, M. Lopez, A. Romano-Rodriguez, H. Hartwig, J. Alloys Compd. 328, 90 (2001)
H. Park, K.S. Jones, J.A. Sinkman, M.E. Law, J. Appl. Phys. 78, 3664 (1995)
M. Lannoo, J. Borguin, Point Defects in Semiconductors I: Theoretical Aspects (Springer-Verlag, Berlin, 1981)
H. Stein, G.A. Samara, Radiation Effects and Defects in Solids (Gordon and Breach Science Publishers, London, 1989). https://doi.org/10.1080/10420158908213015
S. Mitha, S.D. Theiss, M.J. Aziz, D. Schiferl, D.B. Poker, Phys. Appl. Defects Adv. Semicond. 325, 189 (1994)
V. Gusakov, L. Murin, Phys. B 340–342, 773 (2003)
A. Antonelli, J. Bernholic, Phys. Rev. B 40, 10643 (1989)
S.A. Centoni, B. Sadigh, G.H. Gilmer, T.J. Lenosky, T.D. Rubia, C.B. Musgrave, Phys. Rev. B 72, 195206 (2005)
V. Gusakov, Mat. Sci. Semicond. Proc. 9, 531 (2006)
J. Abey, J.P. Goss, R. Jones, P.R. Briddon, Phys. Rev. B 67, 245325 (2003)
S. Charnvanichborikarn, B.J. Villis, B.C. Johnson, J. Wong-Leung, J.C. McCallum, J.S. Williams, C. Jagadish, Appl. Phys. Lett. 96, 051906 (2010)
C. Johnson, B.J. Villis, J.E. Burgess, J.C. McCallum, S. Charnvanichborikarn, J. Wong-Leung, C. Jagadish, J.S. Williams, Appl. Phys. Lett. 111, 094910 (2012)
G.S. Hwang, W.A. Goddard III, Appl. Phys. Lett. 83, 1047 (2003)
A. Agarwal, H.-J. Gossmann, D.J. Eaglesham, Appl. Phys. Lett. 74, 2331 (1999)
J. Schermer, A. Martinez-Limia, P. Pichler, C. Zechner, W. Lerch, S. Paul, Solid-State Electron. 52, 1424 (2008)
S. Mirabella, D. De Salvador, E. Napolitani, E. Bruno, F. Priolo, J. Appl. Phys. 113, 031101 (2013)
S.S. Kapur, T. Sinno, Phys. Rev. B 82, 045205 (2010)
S.S. Kapur, A.M. Nieves, T. Sinno, Phys. Rev. B 82, 045206 (2010)
R.J. Bondi, S. Lee, G.S. Hwang, Phys. Rev. B 80, 125202 (2009)
M. Aboy, I. Santos, P. Lopez, L.A. Marques, L. Pelaz, J. Electron. Mater. 47, 5045 (2018)
M.L. Lee, E.A. Fitgerald, M.T. Bulsara, M.T. Currie, A. Lochtefeld, J. Appl. Phys. 97, 011101 (2005)
Acknowledgements
T. Angeletos is grateful to the A. S. Onassis Foundation for financial support though his Ph.D scholarship (Grant No. G ZL 001-1/2015–2016). We wish also to thank prof. A. Misiuk for carrying out the HTHP treatments of the samples, in the Institute of Electron Technology, Warsaw, Poland.
Author information
Authors and Affiliations
Corresponding authors
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Londos, C.A., Angeletos, T., Antonaras, G.D. et al. Infrared spectroscopy studies of localized vibrations in neutron irradiated silicon. J Mater Sci: Mater Electron 30, 15345–15355 (2019). https://doi.org/10.1007/s10854-019-01909-6
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-019-01909-6