Skip to main content
Log in

Mechanical properties of pure and doped InP single crystals determined under local loading

  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The mechanical properties of pure and doped (Fe, Zn, Sn) InP single crystals have been investigated in the temperature range 293–600 K. It is shown that impurity hardening (increase in microhardness) is much more pronounced at high temperatures than at room temperature because of the retardation of moving dislocations by impurities, which is strongest at high temperatures. Appreciable scratch hardness anisotropy on the (001) face of the experimental crystals at 293 K was observed. It decreases rapidly as the temperature increases in the interval 293–600 K. It is shown that the [110] and \([\bar 110]\) directions on the (001) face of the experimental crystals are nonequivalent. The observed phenomena are explained by the different contributions of the two mechanisms of plastic deformation: slip and twinning in the process of scratch formation along the 〈100〉 and 〈110〉 directions, and along the [110] and \([\bar 110]\) directions.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. G. T. Brown, B. Cockayne, and W. R. Nacevan, J. Mater. Sci. 15, 1469 (1980).

    Google Scholar 

  2. S. G. Simashko et al., in Preparation and Investigation of New Materials in Semiconductor Technology [in Russian], Shtiintsa, Kishinev, 1980.

    Google Scholar 

  3. B. S. Boyarskaya, D. Z. Grabko, and M. S. Kats, Physics of Microindentation Processes [in Russian], Kishinev, 1986, p. 294.

  4. I. Yonenaga and K. Sumino, J. Appl. Phys. 74, 917 (1993).

    Article  ADS  Google Scholar 

  5. S. G. Simashko, N. V. Bezhan, and V. D. Martynenko, Fiz. Tverd. Tela (Leningrad) 19, 1619 (1977) [Sov. Phys. Solid State 19, 946 (1977)].

    Google Scholar 

  6. M. I. Val’kovskaya, B. M. Pushkash, and É. E. Maronchuk, Plasticity and Brittleness of Semiconductor Materials During Microhardness Tests [in Russian], Kishinev, 1972, p. 235.

  7. D. Z. Grabko, V. S. Panfilov, and Z. E. Maronchuk, in Indium Phosphide in Semiconductor Electronics [in Russian], Shtiintsa, Kishinev, 1988.

    Google Scholar 

  8. Yu. S. Boyarskaya, Deformation of Crystals During Microhardness Tests [in Russian], Kishinev, 1972, p. 235.

  9. C. A. Brookes and F. Green, Proc. Roy. Soc. (London) A 368, 37 (1979).

    ADS  Google Scholar 

  10. C. A. Brookes, Phil. Mag. A 43, 529 (1981).

    Google Scholar 

  11. D. B. Holt, J. Mater. Sci. 23, 1131 (1988).

    Article  Google Scholar 

  12. É. E. Maronchuk, in Deformation of Crystals Under a Concentrated Load [in Russian], Shtiintsa, Kishinev, 1978, p. 110.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Additional information

Fiz. Tekh. Poluprovodn. 31, 243–246 (February 1997)

Rights and permissions

Reprints and permissions

About this article

Cite this article

Boyarskaya, Y.S., Grabko, D.Z., Medinskaya, M.I. et al. Mechanical properties of pure and doped InP single crystals determined under local loading. Semiconductors 31, 139–142 (1997). https://doi.org/10.1134/1.1187095

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1187095

Keywords

Navigation