Abstract
The coadsorption of silicon and Group VI elements on the Re\((10\bar 10)\) surface is investigated by the 1 high-resolution Auger spectroscopy. It is demonstrated that, upon deposition of silicon on the surface oxide or surface sulfide, a part of silicon atoms deposited interacts with chalcogen atoms to be desorbed in the form of SiO or SiS molecules. The rest of silicon atoms occupy the becoming free adsorption sites, thus forming surface silicide. The silicon atoms incorporated into the surface silicide loose their reactivity and coexist on the surface together with adsorbed chalcogen atoms.
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Translated from Fizika Tverdogo Tela, Vol. 42, No. 2, 2000, pp. 367–370.
Original Russian Text Copyright © 2000 by Gall’, Rut’kov, Tontegode.
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Gall’, N.R., Rut’kov, E.V. & Tontegode, A.Y. Coadsorption of silicon and chalcogen (S, O) atoms on heated Re\((10\bar 10)\) substrate. Phys. Solid State 42, 377–380 (2000). https://doi.org/10.1134/1.1131216
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DOI: https://doi.org/10.1134/1.1131216