Abstract
Using infrared (IR) spectroscopy and spectral ellipsometry, we experimentally confirmed the previously predicted mechanochemical effect of the stoichiometric composition disorder leading to the formation of carbon-vacancy structures in silicon carbide (SiC) films grown on silicon substrates by the atom substitution method. It was found that a band at 960 cm–1 in the IR spectra of SiC films on silicon, corresponding to “carbon-vacancy clusters” is always present in SiC films grown under pure carbon monoxide (CO) or in a mixture of CO with silane (SiH4) on Si substrates of different orientation and doping level and type. There is no absorption band in the region of 960 cm–1 in the IR spectra of SiC films synthesized at the optimum ratio of the CO and trichlorosilane (SiHCl3) gas pressures. The previously predicted mechanism of the chemical reaction of substitution of Si atoms for carbon by the interaction of gases CO and SiHCl3 on the surface of the silicon substrate, which leads to the formation of epitaxial layers of single-crystal SiC, is experimentally confirmed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
S. A. Grudinkin, V. G. Golubev, A. V. Osipov, N. A. Feoktistov, and S. A. Kukushkin, Phys. Solid State 57, 2543 (2015).
S. A. Kukushkin and A. V. Osipov, J. Phys. D: Appl. Phys. 47, 313001 (2014).
S. A. Kukushkin, A. V. Osipov, and N. A. Feoktistov, Phys. Solid State 56, 1507 (2014).
H. Mutschke, A. C. Andersen, D. Clement, Th. Henning, and G. Peiter, Astron. Astrophys. 345, 187 (1999).
K. Kh. Nussupov, N. B. Beisenkhanov, S. K. Zharikov, I. K. Beisembetov, B. K. Kenzhaliev, T. K. Akhmetov, and B. Zh. Seitov, Phys. Solid State 56, 2307 (2014).
K. Kh. Nussupov and N. B. Beisenkhanov, in Silicon Carbide—Materials, Processing and Applications in Electronic Devices, Ed. by M. Mukherjee (InTech, Croatia, 2011), Chap. 4, p. 69.
S. A. Kukushkin and A. V. Osipov, Dokl. Phys. 57, 217 (2012).
S. A. Kukushkin, K. Kh. Nussupov, A. V. Osipov, N. B. Beisenkhanov, and D. I. Bakranova, Phys. Solid State 59, 1014 (2017).
S. A. Kukushkin and A. V. Osipov, Tech. Phys. Lett. 43, 631 (2017).
M. Bockstedte, A. Mattausch, and O. Pankratov, in Silicon Carbide. Recent Major Advances, Ed. by W. J. Choyke, H. Matsunami, and G. Pensl (Springer, Berlin, 2004), p. 27.
F. A. Johnson, Proc. Phys. Soc. 73, 265 (1959).
C. Bohren and D. Huffman, Absorption and Scattering of Light by Small Particles (Wiley, New York, 1998).
L. Dong, G. Sun, L. Zheng, X. Liu, F. Zhang, G. Yan, W. Zhao, L. Wang, X. Li, and Z. Wang, J. Phys. D: Appl. Phys. 45, 245102 (2012).
D. N. Talwar, Z. C. Feng, C. W. Liu, and C.-C. Tin, Sci. Technol. 27, 115019 (2012).
S. A. Kukushkin, A. V. Osipov, S. K. Gordeev, and S. B. Korchagina, Tech. Phys. Lett. 31, 859 (2005).
Yu. E. Kitaev, S. A. Kukushkin, and A. V. Osipov, Phys. Solid State 59, 28 (2017).
J. A. A. Engelbrecht, I. J. van Rooyen, A. Henry, E. Janzén, and B. Sephton, Infrared Phys. Technol. 72, 95 (2015).
J. E. Spanier and I. P. Herman, Phys. Rev. B 61, 10437 (2000).
M. Born and E. Wolf, Principles of Optics (Pergamon, Oxford, 1968).
T. S. Perova, J. Wasyluk, S. A. Kukushkin, A. V. Osipov, N. A. Feoktistov, and S. A. Grudinkin, Nanoscale Res. Lett. 5, 1507 (2010).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © S.A. Grudinkin, S.A. Kukushkin, A.V. Osipov, N.A. Feoktistov, 2017, published in Fizika Tverdogo Tela, 2017, Vol. 59, No. 12, pp. 2403–2408.
Rights and permissions
About this article
Cite this article
Grudinkin, S.A., Kukushkin, S.A., Osipov, A.V. et al. IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide. Phys. Solid State 59, 2430–2435 (2017). https://doi.org/10.1134/S1063783417120186
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063783417120186