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Manifestation of collective properties of spatially indirect excitons in GaAs/AlGaAs asymmetric double quantum wells

  • Low-Dimensional Systems and Surface Physics
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Abstract

Low-temperature (T=1.8, 4.2 K) luminescence of GaAs/Al0.3Ga0.7As double-coupled asymmetric quantum wells (DQW) is observed under variation of an electric field V dc applied along the normal to the DQW plane. The FWHM of the indirect exciton (IX) emission line was found to undergo, within a certain interval of V dc, a strong (up to a factor 3.5) narrowing, accompanied by anomalously large IX intensity fluctuations in time within the V dc region where a strong decrease (or increase) of the FWHM is observed to occur. The dependence of the FWHM on the pumping level I p also exhibits a substantial decrease of the FWHM within a certain I p interval. The results obtained are discussed in the frame of an assumption which relates the observed phenomena to the onset of a condensed state in the interacting ensemble of spatially indirect excitons in DQWs.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    V. V. Krivolapchuk, E. S. Moskalenko & A. L. Zhmodikov

  2. Physics Department, Nottingham University, NG7-2RD, UK

    T. S. Cheng & C. T. Foxon

Authors
  1. V. V. Krivolapchuk
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  2. E. S. Moskalenko
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  3. A. L. Zhmodikov
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  4. T. S. Cheng
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  5. C. T. Foxon
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Additional information

Fiz. Tverd. Tela (St. Petersburg) 41, 325–329 (February 1999)

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Krivolapchuk, V.V., Moskalenko, E.S., Zhmodikov, A.L. et al. Manifestation of collective properties of spatially indirect excitons in GaAs/AlGaAs asymmetric double quantum wells. Phys. Solid State 41, 291–295 (1999). https://doi.org/10.1134/1.1130770

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  • DOI: https://doi.org/10.1134/1.1130770

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