Abstract
Photoluminescence (PL) transitions of an undoped GaAs/Al0.33Ga0.67As multiple quantum well structure composed of four different well widths (3, 5, 7 and 10 nm) were investigated under pulsed magnetic fields to 50 T. At B = 0 T, four corresponding PL peaks were detected, which exhibit PL line broadening for narrow quantum wells (3 and 5 nm) due to the interface roughness. By comparing the PL peak transition energies with the calculated transition energies including the binding energy corrections, the exact quantum well widths can be determined. In the presence of a magnetic field, PL transitions undergo a diamagnetic shift. By fitting the diamagnetic shift, we were able to estimate the dimensionality parameters, diamagnetic coefficient and magnetic-to-Coulomb energy ratio.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
N. Miura, Physics of Semiconductors in High Magnetic Fields (Oxford University Press, New York, 2008), Chap. 2.
D. C. Rogers, R. J. Nicholas, C. T. Foxon and K. Woodbridge, Phys. Rev. B 34, 4002 (1986).
X. L. Zheng, D. Heiman and B. Lax, Phys. Rev. B 40, 10523 (1989).
S-B. Kim, J-R. Ro, K-S. Lee and E-H. Lee, J. Korean Phys. Soc. 31, 104 (1997).
K-S. Lee, O-K. Kwon, B. S. Jeong, W. S. Han, B. Lee and E. H. Lee, J. Korean Phys. Soc. 31, 693 (1997).
Y. Kim, J. Korean Phys. Soc. 42, 562 (2003).
Y. Kim, Appl. Sci. Conv. Tech. 23, 1 (2014).
Y. Kim, J. Korean Phys. Soc. 67, 956 (2015).
M. Hayne and B. Bansal, Luminescence 27, 179 (2012).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Kim, Y., Song, J.D. & Kohama, Y. Magneto-optical Transitions of GaAs/AlGaAs Multiple Quantum Wells. J. Korean Phys. Soc. 73, 338–342 (2018). https://doi.org/10.3938/jkps.73.338
Received:
Published:
Issue Date:
DOI: https://doi.org/10.3938/jkps.73.338