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Spatial distribution, build-up, and annealing of radiation defects in silicon implanted by high-energy krypton and xenon ions

  • Defects. Dislocations. Physics of Strength
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Abstract

An x-ray diffraction study of defect formation in silicon irradiated by Kr+ (210 MeV, 8×1012−3×1014 cm−2) and Xe+ (5.6 BeV, 5×1011−5×1013 cm−2) ions is reported. It has been established that irradiation produces a defect structure in the bulk of silicon, which consists of ion tracks whose density of material is lower than that of the host. The specific features of defect formation are discussed taking into account the channeling of part of the ions along the previously formed tracks and the dominant role of electron losses suffered by the high-energy ions. It is shown that the efficiency of incorporation of stable defects by irradiation with high-energy ions is lower than that reached by implanting medium-mass ions with energies of a few hundred keV.

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Authors and Affiliations

  1. Belarus State University, 220050, Minsk, Belarus

    A. R. Chelyadinskii, V. S. Varichenko & A. M. Zaitsev

Authors
  1. A. R. Chelyadinskii
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  2. V. S. Varichenko
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  3. A. M. Zaitsev
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Additional information

Fiz. Tverd. Tela (St. Petersburg) 40, 1627–1630 (September 1998)

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Chelyadinskii, A.R., Varichenko, V.S. & Zaitsev, A.M. Spatial distribution, build-up, and annealing of radiation defects in silicon implanted by high-energy krypton and xenon ions. Phys. Solid State 40, 1478–1481 (1998). https://doi.org/10.1134/1.1130580

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  • DOI: https://doi.org/10.1134/1.1130580

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