Abstract
A correlation between the formation of regions of anomalous generation in MOS-structures of silicon and the lattice disturbances of its near-surface layer is studied using the method of relaxation of nonequilibrium capacitance in combination with metallography. It is found that these regions can be formed with a wide range of surface concentrations and charge carrier generation times depending on the oxidation time. The superposition of selective etching patterns and generation-time distribution of a preset wafer segment shows that the formation of regions of anomalous generation is due to the structural lattice disturbances revealed by the Sirtl-etchant as dome-like figures.
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Davydov, V.N., Belyaev, S.V., Popov, V.V. et al. Generation Activity and Structural Defects in Near-Surface Silicon Layers. Russian Physics Journal 46, 1144–1150 (2003). https://doi.org/10.1023/B:RUPJ.0000024366.85202.83
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DOI: https://doi.org/10.1023/B:RUPJ.0000024366.85202.83