The effect of secondary phases on electrical properties of ZnO-based ceramic films prepared by a sol–gel method

Abstract

The ZnO-based ceramic films doped with Bi₂O₃, Sb₂O₃, MnO, Co₂O₃ and Cr₂O₃ were prepared for use as film varistors by a sol–gel method. The formation and the changes of the phases in the films doped with different dopants and annealed at different temperatures were investigated via X-ray diffraction analysis. Three secondary phases, i.e., Bi₂O₃, Zn₇Sb₂O₁₂ spinel and ZnCr₂O₄, were detected in the films when the annealing temperature was above 550 °C. The lattice constants of ZnO and Zn₇Sb₂O₁₂ spinel phase changed with dopants and the annealing temperature, indicating that the diffusion of the ions into the crystals of ZnO and spinel phase had taken placed. The redistribution of the ions changed the constituents of the intergranular phases and the relevant defect species in ZnO grains, and affected intensively the electrical properties of the films, which were used as film varistors. The highest nonlinear coefficient (α) with the lowest leakage current was achieved when the film, which was doped with Bi₂O₃, Sb₂O₃, MnO and Cr₂O₃, was annealed at 750 °C.