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3-D Monte Carlo device simulator for variability modeling of p-MOSFETs

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Abstract

A device simulator for p-MOSFETs, based on the Monte Carlo method for the solution of the Boltzmann transport equation, was developed, and results and implementation challenges are presented and discussed in detail in this paper. By using a Monte Carlo device simulator (MCDS), it is possible to consider effects that affect state-of-the-art devices that cannot be adequately considered using other methods (drift–diffusion, hydrodynamic, etc.). Novel feature of the simulator is that it treats hole–hole and hole–impurity interactions in real space using particle–particle–particle–mesh coupling method, allowing the simulator to account for random dopant fluctuation and charged traps, responsible for random telegraph noise and bias temperature instability, while having a small computational cost enabling statistical simulations. The MCDS shows excellent agreement between experimental data for the hole drift velocity versus electric field and low-field hole mobility versus doping density.

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Funding

Funding was provided by Conselho Nacional de Desenvolvimento Científico e Tecnológico (Grant Nos. 424034/2016-6 and 305569/2017-1).

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Authors and Affiliations

  1. Centro de Desenvolvimento Tecnológico, Universidade Federal de Pelotas, Pelotas, RS, 96010-610, Brazil

    Vinicius V. A. Camargo & Alan C. J. Rossetto

  2. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 85287-5706, USA

    Dragica Vasileska

  3. Programa de Pós-Graduação em Microeletrônica, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS, 91501-970, Brazil

    Gilson I. Wirth

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  1. Vinicius V. A. Camargo
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  2. Alan C. J. Rossetto
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  3. Dragica Vasileska
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  4. Gilson I. Wirth
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Correspondence to Vinicius V. A. Camargo.

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Camargo, V.V.A., Rossetto, A.C.J., Vasileska, D. et al. 3-D Monte Carlo device simulator for variability modeling of p-MOSFETs. J Comput Electron 19, 668–676 (2020). https://doi.org/10.1007/s10825-020-01461-1

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