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On Change in the Silicon Crystal Structure Implanted with Hydrogen Ions during Annealing Based on Three-Crystal X-Ray Diffractometry Data

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Abstract

In this paper, we present the results of a three-crystal X-ray diffractometry (XRD) study of the state of a disturbed layer formed in silicon crystals by implantation of hydrogen ions with energies of 100 + 200 + 300 keV and a total dose of 2 × 1016 cm–2 during the subsequent heat exposure in the temperature range from 200 to 1100°C. Here, X-ray studies were performed in the three-crystal XRD scheme when the sample under consideration operates as a second stationary crystal with various fixed angular detuning α from the Bragg position while the third (perfect) crystal-analyzer sweeps the angular distribution of radiation diffracted by the second crystal. Based on a comparison of the shape of diffraction and diffuse maxima for the samples under study, a qualitative conclusion about a significant transformation of radiation defects at post-implantation annealing was derived.

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Funding

The work was supported by the Ministry of Science and Higher Education.

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Authors and Affiliations

  1. Federal Research Center Crystallography and Photonics, Shubnikov Institute of Crystallography, Russian Academy of Sciences, 119333, Moscow, Russia

    V. E. Asadchikov, I. G. D’yachkova, D. A. Zolotov & F. N. Chukhovskii

  2. Ioffe Institute, 194021, St. Petersburg, Russia

    L. M. Sorokin

Authors
  1. V. E. Asadchikov
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  2. I. G. D’yachkova
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  3. D. A. Zolotov
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  4. F. N. Chukhovskii
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  5. L. M. Sorokin
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Corresponding author

Correspondence to I. G. D’yachkova.

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The authors declare that they have no conflicts of interest.

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Translated by A. Ivanov

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Asadchikov, V.E., D’yachkova, I.G., Zolotov, D.A. et al. On Change in the Silicon Crystal Structure Implanted with Hydrogen Ions during Annealing Based on Three-Crystal X-Ray Diffractometry Data. Phys. Solid State 61, 1383–1388 (2019). https://doi.org/10.1134/S1063783419080079

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  • DOI: https://doi.org/10.1134/S1063783419080079

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