Abstract
The spectra of absorption (μ), reflection (R), ε2, and E 2ε2 of residual silicon (r-Si) were calculated using the R spectra of porous silicon in the range from 0 to 20 eV and with ε2(E) in the range 2.5–5.0 eV of porous silicon specimens with P = 0.57, 0.66, and 0.77. The ε2 spectra of r-Si were decomposed into elemental components. We calculated their main parameters: the energies of maxima E i and halfwidths H i of bands, their areas S i , and heights I i , and oscillator strengths f i . The two-phase Bruggeman model of effective dielectric function and Kramers–Kronig analysis were applied in the calculations. The essential differences between the optical spectra of the residual and cubic silicon were established. They are at least partially attributed to the quantum dimensional effects. The data obtained are compared with the known theoretical spectra of silicon clusters.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
REFERENCES
V. V. Sobolev, Intrinsic Energy Levels of Solids of the A4 Group [in Russian], Kishinev (1978).
V. V. Sobolev and V. V. Nemoshkalenko, Methods of Computational Physics in the Theory of Solids. Electronic Structure of Semiconductors [in Russian], Kiev (1988).
D. J. Lockwood, Solid State Commun., 92, 101-112 (1994).
J. P. Wilcoxon, G. A. Samara, and P. N. Provencio, Phys. Rev. B, 60, 2704-2714 (1999).
U. Woggen, Optical Properties of Semiconductors Quantum Dots: Tracts in Modern Physics, 136, Berlin, Springer 1997).
D. Kovalev, H. Heckler, G. Polisski, and F. Koch, Phys. Status Solidi (b), 215, 871-930 (1999).
V. V. Sobolev, A. P. Timonov, and V. Val. Sobolev: Proc. Meet. “Nanophotonics” [in Russian], Nizhnii Novgorod (2000), pp. 196-199.
V. V. Sobolev and A. I. Kalugin, Zh. Prikl. Spektrosk., 68, 766-770 (2001).
V. V. Sobolev, A. P. Timonov, and V. Val. Sobolev, Fiz. Tverd. Tela, 42, 632-637 (2000).
V. Val. Sobolev, A. P. Timonov, and V. V. Sobolev: Proct. Conf. “Optics, Optoelectronics, and Technologies” [in Russian], Ul'yanovsk (2001), pp. 115-116.
N. Koshida, H. Koyama, Y. Suda, et al., Appl. Phys. Lett., 63, 2774-2776 (1993).
F. Buda, J. Kohanoff, and M. Parrinello, Phys. Rev. Lett., 69, 1272-1275 (1992).
M. Leung and K. B. Whaley, Phys. Rev. B, 56, 7455-7468 (1997).
M. Yu, S. E. Ulloa, and D. A. Drabold, Phys. Rev. B, 61, 2626-2631 (2000).
F. Ferrieu, A. Halimaoui, and D. Bensahel, Solid State Commun., 84, 293-296 (1992).
H. R. Phillip, J. Non-Cryst. Solids, 8-10, 627-632 (1972).
D. T. Pierce and W. E. Spicer, Phys. Rev. B, 5, 3017-3029 (1972).
J. Sotiropoulos and W. Fuhs, Phys. Status Solidi (b), 186, 427-436 (1994).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Sobolev, V.V., Timonov, A.P. & Sobolev, V.V. Optical Spectra of Residual Porous Silicon. Journal of Applied Spectroscopy 70, 432–439 (2003). https://doi.org/10.1023/A:1025145908550
Issue Date:
DOI: https://doi.org/10.1023/A:1025145908550