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Difractometric Investigations into the Influence of Conditions of Diamond Film Growth on Silicon Monocrystals

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Abstract

The influence of the parameters of synthesis on the growth of diamond films is investigated by difractometric methods. The growth rate of diamond films increased for methane concentrations of 2 and 4% and substrate temperatures of 1073, 1173, and 1273 K when the pressure increases from 5 to 22 kPa. A maximum growth rate of 1.2 nm/s was recorded at a pressure of 21.3 kPa, a substrate temperature of 1173 K, and a methane concentration of 4%. In this case, <110> and <311> textured or <110> + <311> doubly textured diamond films grew.

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Authors and Affiliations

  1. Donetsk National University, Ukraine

    P. I. Ignatenko & I. V. Sel'skaya

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  1. P. I. Ignatenko
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  2. I. V. Sel'skaya
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Ignatenko, P.I., Sel'skaya, I.V. Difractometric Investigations into the Influence of Conditions of Diamond Film Growth on Silicon Monocrystals. Russian Physics Journal 45, 180–184 (2002). https://doi.org/10.1023/A:1019608116014

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  • DOI: https://doi.org/10.1023/A:1019608116014

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