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Cleaning Procedure for Single-Crystal Tungsten Substrates

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Inorganic Materials Aims and scope

Abstract

Single-crystal tungsten substrates produced by electron-beam melting were cleaned by annealing in an oxygen atmosphere (∼10–3Pa, ≃1500°C) for a few hours to remove adsorbed carbon and by high-temperature ultrahigh-vacuum annealing (≃2 × 10–8Pa, ≥2500°C) for a few minutes to remove residual oxygen. The process was followed by low-energy ion scattering, Auger electron spectroscopy, and low-energy electron diffraction. The carbon and oxygen adsorbed on the surface of single-crystal tungsten were found to form ordered, oriented structures. The resultant high-purity, structurally perfect W substrates were used to study electron emission in the Ba/W and Re/W systems.

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REFERENCES

  1. Glebovsky, V.G., Semenov, V.N., and Lomeyko, V.V., Influence of the Crystallization Conditions on the Structural Perfection of Mo and W Single Crystals, J. Cryst. Growth, 1988, vol. 87, p. 142.

    Google Scholar 

  2. Cortenraad, R., van der Gon, A.W.D., Brongersma, H.H., et al., A Low Energy Ion Scattering Study of Low-Workfunction Thermionic Dispenser Cathodes, Materialy XIV mezhdunarodnoi konferentsii po vzaimodeistviyu ionov s poverkhnost'yu (Proc. XIV Int. Conf. on Ion-Surface Interactions), Zvenigorod, 1999, vol. 1, p. 153.

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Authors and Affiliations

  1. Eindhoven University of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands

    R. Cortenraad, A. W. Denier van der Gon & H. H. Brongersma

  2. Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    S. N. Ermolov & V. G. Glebovskii

  3. Philips Components, P.O. Box 218, 5600, MB Eindhoven, The Netherlands

    A. Manenschijn

  4. Philips Forschungslaboratorien, P.O. Box 500145, D-52085, Aachen, Germany

    G. Gartner

  5. Institute of Metal Physics, Ural Division, Russian Academy of Sciences, ul. S. Kovalevskoi 14, Yekaterinburg, 620219, Russia

    E. V. Belozerov

Authors
  1. R. Cortenraad
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  2. S. N. Ermolov
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  3. A. W. Denier van der Gon
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  4. V. G. Glebovskii
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  5. H. H. Brongersma
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  6. A. Manenschijn
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  7. G. Gartner
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  8. E. V. Belozerov
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Cortenraad, R., Ermolov, S.N., Denier van der Gon, A.W. et al. Cleaning Procedure for Single-Crystal Tungsten Substrates. Inorganic Materials 37, 673–677 (2001). https://doi.org/10.1023/A:1017617905380

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  • DOI: https://doi.org/10.1023/A:1017617905380

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