Abstract
The distribution of C and A defects in the octahedral growth sectors of a diamond crystal grown by the temperature-gradient method at 6.0 GPa and 1470–1495°C in the Fe–Ni–C system was studied by Fourier transform IR spectroscopy. The use of the induced-zonality technique made it possible to determine the postgrowth annealing duration, evaluate the rate constants K of nitrogen aggregation in the framework of second-order kinetics, and to relate them to the growth rate v g at a particular point. The results demonstrate that the aggregation rate varies widely over the octahedral growth sector and that K varies nonlinearly with v g . The more rapid nitrogen aggregation at higher growth rates is tentatively attributed to an increase in nickel concentration in diamond.
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Babich, Y.V., Feigelson, B.N., Surkov, N.V. et al. Growth Rate Effect on Nitrogen Aggregation in Synthetic Diamonds: Analysis of C- and A-Defect Distributions. Inorganic Materials 38, 464–467 (2002). https://doi.org/10.1023/A:1015414904147
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DOI: https://doi.org/10.1023/A:1015414904147