Abstract
An ultrahigh-vacuum system with sublimation sources of silicon vapors is described. Two sublimation silicon sources in the form of 90-mm-long rods with a cross section of 4 × 4 mm2were used in the procedure of growing high-quality silicon layers. The rods were cut out from ingots of pure Si single crystals or from preliminarily doped crystals with various types of conductivities. The holders of the sources contained no metallic parts in direct contact with silicon heated up to 1380°C. The sources were heated by the current passed through them and were multiply evaporated onto the substrate. A typical growth rate is 1.5 μm/h at 3-cm distance between source and substrate.The pressure in the growth chamber during evaporation was maintained close to the basic one (<1 × 10–8Torr). Photoluminescence measurements of the grown silicon layers showed their perfect crystalline quality.
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Svetlov, S.P., Shengurov, V.G., Tolomasov, V.A. et al. A Sublimation Silicon Molecular-Beam Epitaxy System. Instruments and Experimental Techniques 44, 700–703 (2001). https://doi.org/10.1023/A:1012326430332
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DOI: https://doi.org/10.1023/A:1012326430332