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A silicon sublimation source for molecular-beam epitaxy

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Abstract

A sublimation source for molecular-beam epitaxy of silicon layers with a rectangular wafer of doped Si is described. The wafer is attached to springing molybdenum clamps with a smaller width of the contact pad than the wafer width, thus providing the possibility of the evaporation of Si atoms with a high flux density. The criteria for choosing the geometry of the contact pads, on which the silicon wafer–source is fixed, are presented.

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Authors and Affiliations

  1. Lobachevskii Nizhny Novgorod State University, pr. Gagarina 23, Nizhny Novgorod, 603950, Russia

    V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov & D. V. Shengurov

  2. Institute for Physics of Microstructures, Russian Academy of Sciences, ul. Akademicheskaya 7, Afonino, Kstovskii raion, Nizhny Novgorod oblast, 607680, Russia

    V. G. Shengurov, S. A. Denisov & D. V. Shengurov

Authors
  1. V. G. Shengurov
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  2. S. A. Denisov
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  3. V. Yu. Chalkov
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  4. D. V. Shengurov
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Corresponding author

Correspondence to V. G. Shengurov.

Additional information

Original Russian Text © V.G. Shengurov, S.A. Denisov, V.Yu. Chalkov, D.V. Shengurov, 2016, published in Pribory i Tekhnika Eksperimenta, 2016, No. 3, pp. 138–141.

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Shengurov, V.G., Denisov, S.A., Chalkov, V.Y. et al. A silicon sublimation source for molecular-beam epitaxy. Instrum Exp Tech 59, 466–469 (2016). https://doi.org/10.1134/S0020441216020342

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  • DOI: https://doi.org/10.1134/S0020441216020342

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